Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition

Abstract

The growth and electrical characterization of Si delta-doped GaInP grown by low-pressure metalorganic chemical vapor deposition are reported in this article. It was found that the sheet carrier density saturated as a function of doping time or flow rate. Because of the limitations of Hall-effect measurements, the saturation was explained as the result of electron population in satellite L valley. The mobility enhancement was observed for the delta-doped structure with an enhancement factor of 2-3. A sharp capacitance-voltage profile with a full width at half-maximum of 30 Angstrom was obtained. Depletion-mode Si delta-doped GaInP field-effect transistors with a gate length of 2 mu m and gate width of 50 mu m were fabricated and showed good device pinch-off characteristics. The extrinsic maximum transconductance of 92 mS/mm was obtained and a broad plateau transconductance profile was observed to confirm the electron confinement in the V-shape potential well of a delta-doped GaInP layer. (C) 1996 American Institute of Physics.