Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO(2)/ZrO(2) Dielectrics

Abstract

We have studied the stress reliability of high-k Ni/TiO(2)/ZrO(2)/TiN metal-insulator-metal capacitors under constant-voltage stress. The increasing TiO(2) thickness on ZrO(2) improves the 125-degrees C leakage current, capacitance variation (Delta C/C), and long-term reliability. For a high density of 26 fF/mu m(2), good extrapolated ten-year reliability of small Delta C/C similar to 0.71% is obtained for the Ni/10-nm-TiO(2)/6-5-nm-ZrO(2)/TiN device at 2.5-V operation.