An Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structure

Simple item page
dc.citation.epage397en_US
dc.citation.spage394en_US
dc.citation.woscount0en_US
dc.contributor.authorYao, Jing-Nengen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorChuang, Yu-Linen_US
dc.contributor.authorHuang, Yu-Xiangen_US
dc.contributor.authorShih, Wang-Chengen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2017-04-21T06:49:50Z
dc.date.available2017-04-21T06:49:50Z
dc.date.issued2015en_US
dc.description.abstractWe demonstrate the Au-free GaN HEMT device with the Ti/Al/W Ohmic metal structure. Excellent surface roughness 4.88nm for Ti/Al/W Ohmic stucture was achieved after metallization. The DC characteristics is comparable with conventional HEMTs and the stress performance with high voltage is better than conventional HEMTs.en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/136108
dc.identifier.wosnumberWOS:000380466200100en_US
dc.language.isoen_USen_US
dc.titleAn Au-free GaN High Electron Mobility Transistor with Ti/Al/W Ohmic Metal Structureen_US
dc.typeProceedings Paperen_US

Files

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
1.71 KB
Format:
Item-specific license agreed to upon submission
Description:
Download

Collections

會議論文;;Conferences Paper