Static Induction Transistor Using TaN Thin Film as Gate Electrode for High-Performance Application

Abstract

In this study, static induction transistor (SIT) using TaN thin film as gate electrode was fabricated and the characteristics of this device were investigated. The electrical characteristics showed that the drain-source current was controlled by the bias voltage that applied to the TaN gate electrode. The typical SIT operations with non-saturation property and a transition from linear to nonlinear behavior were observed in the drain-source I-V characteristics. Furthermore, compared with the traditional devices, this SIT device can obtain a high working current (similar to 5 mA) at a low driving voltage (similar to 3 V) with a small threshold voltage (similar to 1 V), showing its high potential for high current and low voltage application.