Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures

Abstract

The low-frequency noise characteristics of partially depleted metal-oxide-semiconductor field-effect transistors (MOSFETs) in silicon-on-insulator technology at various temperatures were investigated. For floating-body devices, a Lorentzian-like noise overshoot is observed due to the floating-body effect. The noise overshoot is dependent on temperature and bias, and can be reduced using a source-to-body-connected structure. At high temperature or high drain bias, the 1/f noise will be observed, and it is temperature-independent due to the trap-induced mobility fluctuation in the channel.