Non-polar plane of wurtzite structure material

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dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber08921851zh_TW
dc.contributor.authorChang Lien_US
dc.contributor.authorHo Yen-Tengen_US
dc.date.accessioned2015-05-12T02:59:41Z
dc.date.available2015-05-12T02:59:41Z
dc.date.issued2014-12-30en_US
dc.description.abstractThe present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.zh_TW
dc.identifier.govdocH01L029/04zh_TW
dc.identifier.govdocC30B023/02zh_TW
dc.identifier.govdocC30B023/06zh_TW
dc.identifier.govdocC30B023/08zh_TW
dc.identifier.govdocC30B025/18zh_TW
dc.identifier.govdocC30B025/06zh_TW
dc.identifier.govdocC30B029/16zh_TW
dc.identifier.govdocC30B029/40zh_TW
dc.identifier.govdocH01L029/20zh_TW
dc.identifier.govdocH01L029/24zh_TW
dc.identifier.govdocH01L021/02zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/122838
dc.language.isozh_TWen_US
dc.titleNon-polar plane of wurtzite structure materialzh_TW
dc.typePatentsen_US

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