Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors

Abstract

Low-frequency noise in boron-doped polycrystalline silicon-germanium (poly-Si1-xGex) resistors at various temperatures is studied. The poly-Si1-xGex films with 0%similar to36% Ge content were grown using ultrahigh vacuum chemical molecular epitaxy system. We find that the low-frequency noise in poly-Si1-xGex decreases with increasing Ge content, due to the lower potential barrier height of grain boundaries in higher Ge content samples. Moreover, the low-frequency noise decreases with increasing temperature. These results are well explained by the carrier mobility fluctuation model. (C) 2002 American Institute of Physics.