非揮發性金屬橋梁式電阻式記憶體之研發

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dc.contributor.author曾俊元 zh_TW
dc.contributor.department國立交通大學電子工程學系及電子研究所 zh_TW
dc.date.accessioned2016-12-20T03:56:47Z
dc.date.available2016-12-20T03:56:47Z
dc.date.issued2016en_US
dc.description.abstract zh_TW
dc.description.abstract en_US
dc.description.sponsorship科技部 zh_TW
dc.identifier.govdocMOST105-2221-E009-143-MY3 zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11886505&docId=487398en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/131851
dc.language.isozh_TWen_US
dc.subject zh_TW
dc.subject en_US
dc.title非揮發性金屬橋梁式電阻式記憶體之研發zh_TW
dc.titleResearch and Development of Nonvolatile Conducting-Bridge Resistive Switching Memory (Cbram)en_US
dc.typePlanen_US

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