半導體薄膜與界面研究計畫---子計畫三：高溫穩定之金屬砷化鎵接面之研究(III)

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dc.contributor.author黃倉秀en_US
dc.contributor.department國立清華大學材料科學工程研究所zh_TW
dc.date.accessioned2014-12-13T10:40:29Z
dc.date.available2014-12-13T10:40:29Z
dc.date.issued1994en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC83-0416-E007-009zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=116915&docId=19252en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/97543
dc.language.isozh_TWen_US
dc.title半導體薄膜與界面研究計畫---子計畫三：高溫穩定之金屬砷化鎵接面之研究(III)zh_TW
dc.titleThe Study of High-Temperature Stable Metal/GaAs Contacts (III)en_US
dc.typePlanen_US

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