Browsing by Author "Basol, Bulent"

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Boosting Ge-epi N-well Mobility with Sn Implantation and P-well Mobility with Cluster-C Implantation
(2018-01-01)
Borland, John
;
Chaung, Shang-Shiun
;
Tseng, Tseung-Yuen
;
Lee, Yao-Jen
;
Joshi, Abhijeet
We investigated the effects of Sn, Si and cluster-C implantation into both P-well and N-well doped regions of 100nm Ge-epilayer on Si wafers after RTA annealing. For the P-well case a 7.3x increase in Hall bulk mobility to 3384cm(2)/Vs with cluster-C implant and for the N-well case a 4.6x increase in Hall bulk mobility to 2062cm(2)/Vs with Sn implant. Measuring layer mobility depth profiles shows mobility in the top 10-20nm of the surface can be up to 6000cm(2)/Vs for N-well with Sn implant and >10,000cm(2)/Vs for P-well with Sn implant.
Boosting Ge-epi P-well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing
(2018-01-01)
Borland, John
;
Chaung, Shang-Shuin
;
Tseng, Tseung-Yuen
;
Joshi, Abhij Eet
;
Basol, Bulent
We investigated the effects of Si, Sn and cluster-C implantation into both P-well and N-well doped regions of Ge-epi on Si wafers after laser annealing. XRD analysis shows improved Ge-epi crystallinity after >1.5J/cm(2) laser melt annealing (liquid phase epitaxial regrowth) compared to sub-melt annealing (solid phase epitaxial regrowth). For the P-well case the Ge-epi Rs decreased to 1,600 Omega/square compared to Si at 3,400 Omega/square suggesting a hole mobility increase of 2.1x from 150cm(2)/V-s to 315cm(2)/V-s but actual measured Hall mobility was 650cm(2)/V-s to a depth of 60nm, an increase of 4.3x. The 1.8J/cm(2) laser melt anneal with Si implant improved mobility uniformly to 700cm(2)/V-s to a depth of 100nm while Sn implant improved mobility to 900cm(2)/V-s from the Ge-epi surface to a depth of 70nm then increases to 3000cm(2)/V-s at a depth of 100nm. Measuring mobility depth profiles can be very critical in engineering surface and bulk mobility improvements which can be determined by chemical compositional changes in the Ge-epilayer especially for C where no liquid phase diffusion or movement could be detected.
Comparing RTA and Laser SPE & LPE Annealing of Ge-epi with Si, Sn & C Implantation for Well Mobility/Strain Engineering
(2019-01-01)
Borland, John
;
Chaung, Shang-Shuin
;
Tseng, Tseung-Yuen
;
Joshi, Abhijeet
;
Basol, Bulent