Browsing by Author "Binh-Tinh Tran"

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Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
(2012)
Binh-Tinh Tran
;
Chang, Edward Yi
;
Lin, Kung-Liang
;
Luong, Tien-Tung
;
Yu, Hung-Wei
We present the effect of multiple AlN buffer layers on characterizations of GaN film quality, which includes a thin high-low-high-temperature (HLHT) AlN buffer layers. The study is based on two different thicknesses of the GaN films on the buffers and found that the HLHT AlN buffer layers could significantly affect on the GaN films qualities. The buffer plays a very important role for the growth of GaN film on Si (111) substrate. The GaN film with an uniformly faceted surface and very high-quality has been obtained at the optimized multiple HLHT AlN buffer layers of 50-nm-thick at 1010-800-1010 degrees C.
Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors
(2014-04-01)
Quang-Ho Luc
;
Chang, Edward Yi
;
Trinh, Hai-Dang
;
Hong-Quan Nguyen
;
Binh-Tinh Tran
The influence of different annealing processes including post deposition annealing (PDA) and post metallization annealing (PMA) with various temperatures (250-400 degrees C) and ambient [N-2 and forming gas (FG)] on the electrical characteristics of Pt/Al2O3/In0.53Ga0.47As MOSCAPs are systemically studied. Comparing to samples underwent high PDA temperature, the higher leakage current has been observed for all of samples underwent high PMA temperature. This has resulted in the degradation of capacitance-voltage (C-V) behaviors. In conjunction with the current-voltage (J-V) measurement, depth profiling Auger electron spectroscopy (AES) and high-resolution transmission electron microscopy (HRTEM) analyses evidence that the out-diffusion of metal into oxide layer is the main source of leakage current. The noticeable passivation effect on the Al2O3/InGaAs interface has also been confirmed by the samples that underwent PDA process. (C) 2014 The Japan Society of Applied Physics
Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVD
(2014-07-01)
Chi-Lang Nguyen
;
Nguyen Hong Quan
;
Binh-Tinh Tran
;
Su, Yung-Hsuan
;
Tang, Shih-Hsuan
High crystal quality, smooth surface and fully relaxed Ge1-xSix (0.05 <= x <= 0.1) buffers are grown on 6 degrees-off (100) Si substrate by UHV-CVD. A low-temperature (LT) Ge seed layer is used to improve the quality of the Ge1-xSix buffers. In this study, the LT-Ge seed layer is deposited directly onto the Si substrate at a low temperature of 315 degrees C. After that, stress-free Si0.1Ge0.9 and Si0.05Ge0.95 layers are grown, respectively. An in-situ annealing process is also performed for the Si0.1Ge0.9/LT-Ge layers to increase the degree of relaxation. The total thickness of the epitaxial layer is 270 nm, with the average surface roughness at 0.6 nm.
Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate
(2013-01-01)
Binh-Tinh Tran
;
Ming, Chen-Hauw
;
Lin, Kung-Liang
;
Chen, Hao-Ming
;
Wang, Ching-Chian
In this study, the growth of GaN-films-based light emitting diodes (LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and 19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
(2011-11-01)
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
High-quality In(0.4)Ga(0.6)N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In(0.4)Ga(0.6)N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In(0.4)Ga(0.6)N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
(2011-11-01)
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
High-quality In0.4Ga0.6N film grown on GaN/AlN/Si(111) templates was obtained by metal organic chemical vapor deposition (MOCVD) with negligible phase separation. A template of high-quality GaN grown on a Si(111) substrate using AlN buffer layers was used for subsequent In0.4Ga0.6N growth. The GaN layer was 0.6 mu m thick with rocking-curve full width at half maximum (FWHM) for a GaN(002) peak better than 430 arcsec. The In0.4Ga0.6N film grown was 0.3 mu m thick with a dislocation density of 6 x 10(7) cm(-2) and X-ray (omega-2 theta) FWHM better than 130 arcsec. (C) 2011 The Japan Society of Applied Physics
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
(2012-01-01)
Hai-Dang Trinh
;
Lin, Yue-Chin
;
Chang, Edward Yi
;
Hong-Quan Nguyen
;
Wang, Shin-Yuan
The influence of post deposition annealing (PDA) temperatures on electrical characteristics of Al2O3/InSb metal-oxide-semiconductor capacitor (MOSCAP) structures is investigated. Low frequency C-V responses with strong inversion behavior in the whole range of measured frequency (100 Hz-1 MHz) are observed, indicating very short minority carrier response time in InSb. The PDA temperature of 300 degrees C and above would result in the reduction of maximum capacitance. At the PDA temperature of above 300 degrees C the C-V hysteresis, frequency dispersion and stretch out increases significantly, indicating the degradation of the MOSCAP structures. The degradation might relate to the interdiffusion between Al2O3 and InSb during thermal steps.
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
(2012-05-01)
Hong-Quan Nguyen
;
Chang, Edward Yi
;
Yu, Hung-Wei
;
Hai-Dang Trinh
;
Dee, Chang-Fu
High quality In0.3Ga0.7As and In0.51Ga0.49As epilayers have been successfully grown on the GaAs substrate by MOCVD. A cross-sectional study by transmission electron microscopy showed that the threading dislocations (TDs) have been successfully contained and limited within the buffer layers designed to stop the elongation of TDs into the In0.3Ga0.7As and In0.51Ga0.49As epilayers. A TD density of 1 x 10(6) cm(-2) in a fully relaxed In0.51Ga0.49As epilayer was achieved. The measurement of lifetimes of n- and p-type In0.51Ga0.49As has been done by using time-resolved photoluminescence. A great reduction in the number of recombination centers in the InGaAs epilayer has been shown. (c) 2012 The Japan Society of Applied Physics