Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate

Abstract

In this study, the growth of GaN-films-based light emitting diodes (LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and 19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.