Browsing by Author "C.Y.Wu"

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氮化硼—矽介面之電氣特性
(交大學刊編輯委員會, 1976-04)
吳啓明
;
吳慶源
;
C.M.Wu
;
C.Y.Wu
Boron nitride thin films on silicon substrate were prepared by electron-beam evaporation techniques for wide range of substrate temperature control and different temperature nitridind annealing processes. It is found that the interface charge of boron nitride thin film on silicon gives the negative surface state charge of 2.5*10^11/cm^2 and 7.6*10^11/cm2 for n- and p-type silicon substrate, respectively, the flat-band voltage is always less than one volt. The surface state density of MIS capacitor structure is studied by the differentiation method, and the trapped charge rearrangements due to B-T testing are interpreted. The boron nitride thin film properties are also studied by I-V characteristics. It is found that the precipitates of B2O3 will give the ohmic conduction current with activation energy of 0.395 ev for n-type sample at low positive gate voltage (electric field less than 10^4v/cm), the schottky emission conduction rather than the Frenkel-Poole emission is observed at high electric field (>10^4v/cm) for both n- and p-type silicon MIS capacitor structure. The boron nitride p- and n-channel MISFET are fabricated by using the conventional planar technology incorporated with the electron-beam evaporation of boron- nitride gate insulator layer. The electrical properties and possible device applications are examined.
短通道V型場效電晶體研製和其電氣特性
(交大學刊編輯委員會, 1976-04)
陳建輝
;
吳慶源
;
C.H. Chen
;
C.Y.Wu
Short channel n-VMOS and p-VMOS field effect transistors are designed fabricated by using anisotropic etching solution of hydrazine and water mixture. The modified first order theory is developed for V-groove MOS structure to account for the non-uniform gate oxide thickness. It is found that the developed theory is in excellent agreement with the experimental data. VMOS fabrication techniques are discussed and the electrical properties of the fabricated discrete n-VMOS and p-VMOS devices are measured and examined.
電子束蒸鍍在矽上鈦酸鋇之電氣特性
(交大學刊編輯委員會, 1976-04)
吳重雨
;
吳慶源
;
C.Y.Wu
;
C.Y.Wu
The electrical properties of barium titanate films approximately from 1000Å to 5000Å thick, prepared by electron beam evaporation onto silicon(n or p) substrates in high vaccum system were investigated. The effects of substrate heating during deposition, different temperature and gases annealing process after deposition were also studied. The electrical characteristics of the film, including the dielectric constant, loss tangent, conductivity, metal-insulator-semiconductor surface properties, and ferroelectricity were also investigated. It was found that the room temperature substrate deposition and the annealing temperature below 120℃,would give the relative dielectric constant up to 1000 for both n- and p-type silicon substrate. The ferroelectric transition of barium titanate-silicon MIS structure was observed. The hysteresis behavior of barium titanate silicon MIS structure was first demonstrated and seemed promising to be used as non-voltile memory devices.