Browsing by Author "CHEN, BS"

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ADAPTIVE CONTROLLER WITH DESIRED POLE ZERO ASSIGNMENT
(1986-11-01)
LIN, CM
;
CHEN, BS
;
電控工程研究所
;
Institute of Electrical and Control Engineering
ADAPTIVE DEADBEAT CONTROL
(1987-07-01)
LIN, CM
;
CHEN, BS
;
電控工程研究所
;
Institute of Electrical and Control Engineering
DIELECTRICS DEGRADATION OF ALPHA-SI/CO/SIO2/SI STRUCTURE DURING FURNACE ANNEALING
(1994-07-01)
CHEN, BS
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The dielectric properties, which are highlighted on electrical characteristics, of alpha-Si/CO/SiO2/Si Structure after thermal annealing have been studied. A one-step high temperature (greater-than-or-equal-to 700-degrees-C) annealing process is found to deteriorate considerably the characteristics of the masking oxide. The tetraethylorthosilicate oxide needs a high-temperature preanneal prior to the self-aligned silicided (SALICIDE) process in order to prevent crack and pit formation and severe electrical degradation during silicidation annealing. A two-step annealing process with the first annealing performed at 550-degrees-C for 30 min has proved to be a trustworthy salicide process without affecting the dielectric properties of masking oxide.
EXTENSION OF LINEAR QUADRATIC OPTIMAL-CONTROL THEORY FOR MIXED BACKGROUNDS
(1991-10-01)
LEE, BK
;
CHEN, BS
;
LIN, YP
;
電子工程學系及電子研究所
;
電控工程研究所
The problem of finding an optimal controller, while both deterministic and stochastic signals are present in the feedback system, is addressed. A general framework is developed to solve the above problem and to unify conventional frequency domain LQ and LQG optimal control theories. Both the system transient and steady-state behaviours are considered and the exact tracking of the arbitrary reference signal is guaranteed. The decomposition of a mixed signal into the deterministic and stochastic parts gives a chance to investigate the effect of the weighting factors, which were specified in the cost function, on the compromise between transient and steady-state system performance. The solution, which characterizes the structure of the optimal controller, results in a set of independent diophantine equations, instead of a set of coupled ones. Moreover, the number of equations can be reduced under weak conditions. Finally, both transient command tracking and steady-state noise rejection capabilities can be optimized simultaneously by using a two-parameter control scheme.
EXTENSION OF LINEAR QUADRATIC OPTIMAL-CONTROL THEORY FOR MIXED BACKGROUNDS
(1991-10-01)
LEE, BK
;
CHEN, BS
;
LIN, YP
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The problem of finding an optimal controller, while both deterministic and stochastic signals are present in the feedback system, is addressed. A general framework is developed to solve the above problem and to unify conventional frequency domain LQ and LQG optimal control theories. Both the system transient and steady-state behaviours are considered and the exact tracking of the arbitrary reference signal is guaranteed. The decomposition of a mixed signal into the deterministic and stochastic parts gives a chance to investigate the effect of the weighting factors, which were specified in the cost function, on the compromise between transient and steady-state system performance. The solution, which characterizes the structure of the optimal controller, results in a set of independent diophantine equations, instead of a set of coupled ones. Moreover, the number of equations can be reduced under weak conditions. Finally, both transient command tracking and steady-state noise rejection capabilities can be optimized simultaneously by using a two-parameter control scheme.
FORMATION OF COBALT-SILICIDED P+N JUNCTIONS USING IMPLANT THROUGH SILICIDE TECHNOLOGY
(1992-11-15)
CHEN, BS
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper investigates electrical and material properties of cobalt silicided p+ n junctions fabricated using implant through silicide (ITS) technology. The annealing procedure was carried out in an open-tube furnace with flowing nitrogen. To prevent residual oxygen in the furnace from reacting with the cobalt, a passivating film of molybdenum was used during the initial stage of annealing. BF2+ ion implantation was employed for the p+ n junction formation. The ITS scheme and the subsequent annealing conditions were evaluated by analysis of the material properties and investigation of the electrical characteristics of the silicided junctions. During high-temperature annealing (greater-than-or-equal-to 900-degrees-C), Co silicide releases its high surface energy via silicon precipitation and film agglomeration. High-temperature stability of the Co silicide can be improved by BF2+ ion implantation, as indicated by the retardation of film agglomeration and decreased degradation of sheet resistance. Cobalt-silicided p+ n junction diodes with 0.1 mum junction depth measured from the silicide/silicon interface were fabricated at a 700-degrees-C annealing and shown to possess excellent electrical properties. The leakage current density measured at -5 V was 0.5 nA/cm2 and a forward ideality factor of 1.006 was obtained. It was found that Co silicide is suitable to serve as an energy barrier and dopant diffusion source for the ITS scheme at low-temperature annealing. For elevated temperatures (greater-than-or-equal-to 900-degrees-C), the use of cobalt silicide as a dopant diffusion source becomes impractical because the dopant evaporation and silicide agglomeration severely degrade junction performance. Nevertheless, the silicide layer can be used as an energy barrier and implantation damage basin for high-temperature processes. No evidence of the electrically activated trapping centers related to the cobalt atoms was observed with BF2+ implantation at energies up to 100 keV. Thus, there is no fundamental limitation prohibiting the formation of cobalt-silicided shallow junctions being fabricated using ITS technology.
FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILM
(1993-09-01)
CHEN, BS
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Junction formation by As+ ion implantation into CoSi2 and subsequent drive-in annealing was investigated. Diodes with a leakage current density of 0.4 nA/cm2 at 5 V reverse bias can be obtained by a 700-degrees-C/90 min furnace annealing. The performance of junction is mainly determined by the annealing temperature and time as well as the implantation dose. The implantation energy only has a minor effect on junction properties. Based on the experimental results, we define an appropriate process window for this junction formation technique.
INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING
(1992-04-09)
CHEN, BS
;
CHEN, MC
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The interaction of cobalt and thermally grown field oxide (5000 angstrom) during low temperature furnace annealing (600-800-degrees-C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters from in the silicon substrate when the annealing temperature exceeds 700-degrees-C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600-degrees-C.
LQG OPTIMAL-CONTROL SYSTEM-DESIGN UNDER PLANT PERTURBATION AND NOISE UNCERTAINTY - A STATE-SPACE APPROACH
(1989-05-01)
CHEN, BS
;
DONG, TY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
MODEL-REFERENCE DEADBEAT CONTROL
(1991-11-01)
LEE, BK
;
CHEN, BS
;
LIN, YP
;
電子工程學系及電子研究所
;
電控工程研究所
The performance of deadbeat control systems is addressed. Analysis of conventional deadbeat control (CDC) reveals that, in addition to deadbeat tracking performance, other system properties, such as robustness and noise immunity, may need improvement. A model reference deadbeat control (MRDC) is proposed to remedy such deficiencies of CDC systems. Several examples are given to show that the MRDC scheme is better than the CDC scheme in attaining good transient response, noise immunity and robustness if a suitable reference model is selected.
MULTIPURPOSE DEADBEAT CONTROLLER SYNTHESIS IN M-DIMENSIONAL DISCRETE MULTIVARIABLE SYSTEMS
(1986-11-01)
LIN, CM
;
CHEN, BS
;
電控工程研究所
;
Institute of Electrical and Control Engineering
MULTIPURPOSE DEADBEAT CONTROLLERS FOR MULTIVARIABLE SYSTEMS
(1987-10-01)
LIN, CM
;
CHEN, BS
;
電控工程研究所
;
Institute of Electrical and Control Engineering
NECESSARY AND SUFFICIENT CONDITION FOR STABILITY ROBUSTNESS UNDER NONLINEAR TIME-VARYING UNCERTAINTIES
(1990-02-01)
CHOU, HH
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CHEN, BS
;
LIN, YP
;
電子工程學系及電子研究所
;
電控工程研究所
OPTIMAL ROBUSTNESS VIA CONSTRAINED CONTROLLER IN SISO DISCRETE-TIME FEEDBACK-SYSTEMS
(1988-10-01)
CHEN, BS
;
CHOU, HH
;
電控工程研究所
;
Institute of Electrical and Control Engineering
ROBUST POLE PLACEMENT - A FREQUENCY-DOMAIN APPROACH
(1990-02-01)
CHOU, HH
;
CHEN, BS
;
LIN, YP
;
電子工程學系及電子研究所
;
電控工程研究所
ROBUST STABILITY ANALYSIS OF KALMAN-BUCY FILTER UNDER PARAMETRIC AND NOISE UNCERTAINTIES
(1988-12-01)
CHEN, BS
;
DONG, TY
;
電控工程研究所
;
Institute of Electrical and Control Engineering