FORMATION OF N+P SHALLOW JUNCTION BY AS+ IMPLANTATION THROUGH COSI2 FILM

Abstract

Junction formation by As+ ion implantation into CoSi2 and subsequent drive-in annealing was investigated. Diodes with a leakage current density of 0.4 nA/cm2 at 5 V reverse bias can be obtained by a 700-degrees-C/90 min furnace annealing. The performance of junction is mainly determined by the annealing temperature and time as well as the implantation dose. The implantation energy only has a minor effect on junction properties. Based on the experimental results, we define an appropriate process window for this junction formation technique.