Browsing by Author "CHEN, WC"

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ELECTRICAL CHARACTERIZATION OF ARSENIC-ION-IMPLANTED SEMIINSULATING GAAS BY CURRENT-VOLTAGE MEASUREMENT
(1994-12-19)
LIN, GR
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CHEN, WC
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CHANG, CS
;
PAN, CL
;
光電工程學系
LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1994-08-01)
CHEN, WK
;
CHANG, CS
;
CHEN, WC
;
電子物理學系
;
光電工程學系
The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350-degrees-C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425-degrees-C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 X 10(-7) A/cm2, comparable to that of a normal GaAs Schottky diode.
SUBPICOSECOND CARRIER LIFETIMES IN ARSENIC-ION-IMPLANTED GAAS
(1995-12-04)
GANIKHANOV, F
;
LIN, GR
;
CHEN, WC
;
CHANG, CS
;
PAN, CL
We have investigated photoexcited carrier lifetimes in arsenic-ion-implanted semi-insulating GaAs by time-resolved reflectivity measurements. Subpicosecond carrier lifetimes (220 to 550 fs) which do not exhibit apparent dosage dependence for samples bombarded with 200 keV arsenic ions at increasing dosages in the range of 10(12) and 10(16) ions/cm(2) are reported. The shortest carrier lifetime was observed for the sample irradiated at 10(13) ions/cm(-2). These are the shortest lifetimes ever observed for ion-damaged GaAs and comparable to those of low-temperature molecular beam epitaxially grown GaAs, which is also nonstoichiometric with excess-arsenic-related, deep-level defects. (C) 1995 American Institute of Physics.