Browsing by Author "CHEN, WK"

Now showing 1 - 6 of 6

Composition control in the growth of AlAs1-xSbx alloys
(1995)
OU, J
;
CHEN, WK
;
電子物理學系
;
Department of Electrophysics
EFFECT OF HYDROGENATION ON DEEP-LEVEL TRAPS IN INP ON GAAS
(1992-01-01)
CHEN, YF
;
SUNG, KC
;
CHEN, WK
;
LUE, YS
;
電子物理學系
Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10(15) cm-3 for samples with a carrier concentration of 10(16) cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 10(14) cm-3 and of the carrier concentration to 10(15) cm-3.
EFFECTS OF HYDROGENATION ON ELECTRICAL-PROPERTIES OF INP GROWN ON GAAS BY THE PHOTOCHEMICAL VAPOR-DEPOSITION SYSTEM
(1993-01-01)
LIN, TY
;
CHEN, YF
;
CHEN, WK
;
LUE, YS
;
電子物理學系
Effects of hydrogenation on electrical properties of InP epilayers grown on GaAs substrates by 'photochemical vapor deposition' have been investigated. The electrical properties were characterized by current-voltage and capacitance-voltage measurements at room temperature. Deep level transient spectroscopy technique was used as an auxiliary method to detect the deep level traps. Hydrogen plasma exposure at 250-degrees-C for 3 h increased the reverse breakdown voltage by a factor of about 1.7 and the Schottky barrier height by 0.05 eV. In addition, the shallow and deep levels were substantially passivated. These results indicate that hydrogenation by the photochemical vapor deposition system for InP on GaAs is an excellent method to improve its device application.
INFLUENCE OF THERMODYNAMIC FACTORS ON GROWTH OF ALAS1-XSBX ALLOYS
(1994-10-01)
CHEN, WK
;
CHIN, MT
;
交大名義發表
;
電子物理學系
;
National Chiao Tung University
Epitaxial layers of AlAs1-xSbx have been prepared by metalorganic vapor phase deposition (MOCVD) in a horizontal, atmospheric-pressure quartz reactor. The influences of the V/III ratio and the input partial pressure of trimethylantimony were systematically studied. The experimental results are in good agreement with the calculated ones, based on thermodynamic considerations, which implies that the growth of AlAsSb in MOCVD is controlled predominantly by thermodynamics.
LOW-TEMPERATURE EPITAXY OF GAAS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1994-08-01)
CHEN, WK
;
CHANG, CS
;
CHEN, WC
;
電子物理學系
;
光電工程學系
The low-temperature (LT) epitaxial growth of high quality GaAs films is achieved by using triethylgallium and tertiarybutylarsine as the precursors. Without any external work, the deposition can be conducted at a temperature as low as 350-degrees-C in a conventional metalorganic chemical vapor deposition system. The full width at half-maximum of 77 K photoluminescence and X-ray rocking curve for a sample grown at 425-degrees-C are 8.2 meV and 14 arcsec, respectively. Materials with good electrical properties were also obtained. A Schottky diode formed on the LT CaAs epilayer shows a barrier height of 0.83 eV, and a reverse saturation current of 1.1 X 10(-7) A/cm2, comparable to that of a normal GaAs Schottky diode.
ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF ALASXSB1-X FILMS USING TERTIARYBUTYLARSINE
(1994-03-15)
CHEN, WK
;
OU, J
;
LEE, WI
;
交大名義發表
;
電子物理學系
The deposition of AlAsxSb1-x films is studied systematically using an organometallic vapor phase epitaxy growth technique. It is found that the growth of AlAsSb films requires a low V/III ratio to enhance the incorporation of antimony into the solid. The composition of the alloy also depends strongly on the growth temperature. Experimental data shows that films grown at higher temperatures yield much higher AlSb contents in the AlAsxSb1-x alloys. This is contrary to the results reported for GaAsSb films. In our study, we are able to grow metastable AlAsxSb1-x epitaxial films throughout the entire range of the solid composition for temperatures above 550-degrees-C.