EFFECT OF HYDROGENATION ON DEEP-LEVEL TRAPS IN INP ON GAAS

Abstract

Deep levels in the heteroepitaxial undoped InP layers grown directly on GaAs substrates by organometallic vapor-phase epitaxy have been investigated by deep-level transient spectroscopy. Two electron traps have been observed with activation energies of 0.4 and 0.57 eV in the temperature range between 150 and 310 K. The trap concentrations of these levels are in the order of 10(15) cm-3 for samples with a carrier concentration of 10(16) cm-3. Incorporation of atomic hydrogen into the InP layer by a photochemical vapor deposition system produces substantial decreases of the trap concentrations to 10(14) cm-3 and of the carrier concentration to 10(15) cm-3.