Browsing by Author "Chan, Chin-Wen"

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Novel BEOL InGaZnO R-load-Type Logic-Gate Technology
(2014)
Chan, Chin-Wen
;
Lin, Horng-Chih
;
Huang, Tiao-Yuan
;
電機學院
;
電子工程學系及電子研究所
N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (> 10(8)). Functional operation of the inverters is demonstrated with this simple scheme.
Novel InGaZnO inverters utilizing film profile engineering
(2015-08-01)
Lin, Horng-Chih
;
Wu, Ming-Hung
;
Chan, Chin-Wen
;
Lyu, Rong-Jhe
;
Huang, Tiao-Yuan
In this study we cleverly employ the film profile engineering (FPE) concept to fabricate amorphous InGaZnO (a-IGZO) thin-film transistor (TFT)-based inverters with a resistor-or transistor-load. In the fabrication the profiles of major thin films in both load and drive devices can be properly tailored with designed channel dimensions and deposition conditions. Although the inverter with a resistor-load is simpler in structure and fabrication, the switching performance is found to be restricted by the passive load component. The performance can be greatly promoted as a depletion-mode transistor-load is used instead. Full-swing operation is demonstrated for the inverter with a voltage gain of 28 recorded at an operation voltage (V-DD) of 5V. (C) 2015 The Japan Society of Applied Physics