Novel BEOL InGaZnO R-load-Type Logic-Gate Technology

Abstract

N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (> 10(8)). Functional operation of the inverters is demonstrated with this simple scheme.