Novel BEOL InGaZnO R-load-Type Logic-Gate Technology
| dc.citation.woscount | 0 | en_US |
| dc.contributor.author | Chan, Chin-Wen | en_US |
| dc.contributor.author | Lin, Horng-Chih | en_US |
| dc.contributor.author | Huang, Tiao-Yuan | en_US |
| dc.contributor.department | 電機學院 | zh_TW |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | College of Electrical and Computer Engineering | en_US |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2017-04-21T06:50:15Z | |
| dc.date.available | 2017-04-21T06:50:15Z | |
| dc.date.issued | 2014 | en_US |
| dc.description.abstract | N-channel InGaZnO (IGZO) inverters with a resistor-load were fabricated with film-profile engineering (FPE). In this scheme the profiles of the deposition films contained in the device are tailored to adjust its operation characteristics. The fabricated drive thin-film transistors (TFTs) show steep subthreshold swing (88 mV/dec) and high on/off current ratio (> 10(8)). Functional operation of the inverters is demonstrated with this simple scheme. | en_US |
| dc.identifier.isbn | 978-1-4799-5677-7 | en_US |
| dc.identifier.issn | 2161-4636 | en_US |
| dc.identifier.journal | 2014 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/135336 | |
| dc.identifier.wosnumber | WOS:000393376800072 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Novel BEOL InGaZnO R-load-Type Logic-Gate Technology | en_US |
| dc.type | Proceedings Paper | en_US |
Files
License bundle
1 - 1 of 1
Loading...
- Name:
- license.txt
- Size:
- 1.71 KB
- Format:
- Item-specific license agreed to upon submission
- Description: