Browsing by Author "Chan, Lih-Hsiung"

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Selected area electrophoretic deposition of carbon nanotubes in triode structure for field emission device
(2007-07-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Whang, Wha-Tzong
;
Chen, Kuo-Feng
;
Hwang, Jun-Dar
In this work, carbon nanotubes (CNTs) were deposited in a triode structure by electrophoretic deposition (EPD). Two power supplies were used in order to provide a gate electrode and a cathode electrode with different voltages. Following the electric field distribution, CNTs were forcibly dragged toward the cathode electrode but repelled out of the gate electrode. By this designed voltage-controlling method, CNTs were deposited in the selected area without any photoresist or sacrificial layer.
Thick-film structure geometry effect on carbon nanotubes synthesized by chemical vapor deposition
(2008-06-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Whang, Wha-Tzong
;
Lee, Shu-Hsing
;
Chen, Kuo-Feng
In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film normal triode structures may range from 10 to 50 mu m. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.