Browsing by Author "Chang, Chih-Sheng"

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Investigation of the strained PMOS on (110) substrate
(2007)
Tang, Chun-Jung
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Huang, Shih-Hian
;
Wang, Tahui
;
Chang, Chih-Sheng
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電子工程學系及電子研究所
This paper performed a detail study on the strained PMOS fabricated on the (I 10) Si substrate. We showed that in the (I 10) plane, the four-fold symmetry direction, <111(,)>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111(,)> PMOS with multiple process induced stressors.
Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model
(2006-08-01)
Sheu, Yi-Ming
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Yang, Sheng-Jier
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Wang, Chih-Chiang
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Chang, Chih-Sheng
;
Chen, Ming-Jer
N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage (I-V) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold I-V characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion.
Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors
(2009-10-05)
Tang, Chun-Jung
;
Wang, Tahui
;
Chang, Chih-Sheng
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Quantum confinement effects on hole mobility in silicon and germanium double gate p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied by using a Monte Carlo method. Uniaxial stress and channel/substrate orientation effects are considered. Our result shows that the hole mobility in a (100)/[110] silicon well decreases with a decreasing well thickness, which is in agreement with the experimental result. The hole mobility in a germanium channel MOSFET, however, exhibits a peak in a sub-20 nm well because of the interplay between intrasubband and intersubband scatterings. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3244205]