Browsing by Author "Chang, H. -L."

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Performance enhancement of the nMOSFET low-noise amplifier by package strain
(2007-01-01)
Hua, W. -C.
;
Chang, H. -L.
;
Wang, T.
;
Lin, C. -Y
;
Lin, C. -P.
The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.