Performance enhancement of the nMOSFET low-noise amplifier by package strain

Abstract

The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.