Performance enhancement of the nMOSFET low-noise amplifier by package strain

Title:	Performance enhancement of the nMOSFET low-noise amplifier by package strain
Authors:	Hua, W. -C. Chang, H. -L. Wang, T. Lin, C. -Y Lin, C. -P. Lu, S. S. Meng, C. C. Liu, C. W. 電信工程研究所 Institute of Communications Engineering
Keywords:	biaxial strain;cutoff frequency;low-noise amplifier (LNA);noise factor;noise figure (NF);package strain;tensile transconductance.
Issue Date:	1-Jan-2007
Abstract:	The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.
URI:	http://dx.doi.org/10.1109/TED.2006.887194 http://hdl.handle.net/11536/11267
ISSN:	0018-9383
DOI:	10.1109/TED.2006.887194
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	54
Issue:	1
Begin Page:	160
End Page:	162
Appears in Collections:	Articles

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