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dc.contributor.authorHua, W. -C.en_US
dc.contributor.authorChang, H. -L.en_US
dc.contributor.authorWang, T.en_US
dc.contributor.authorLin, C. -Yen_US
dc.contributor.authorLin, C. -P.en_US
dc.contributor.authorLu, S. S.en_US
dc.contributor.authorMeng, C. C.en_US
dc.contributor.authorLiu, C. W.en_US
dc.date.accessioned2014-12-08T15:14:59Z-
dc.date.available2014-12-08T15:14:59Z-
dc.date.issued2007-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2006.887194en_US
dc.identifier.urihttp://hdl.handle.net/11536/11267-
dc.description.abstractThe package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.en_US
dc.language.isoen_USen_US
dc.subjectbiaxial strainen_US
dc.subjectcutoff frequencyen_US
dc.subjectlow-noise amplifier (LNA)en_US
dc.subjectnoise factoren_US
dc.subjectnoise figure (NF)en_US
dc.subjectpackage strainen_US
dc.subjecttensile transconductance.en_US
dc.titlePerformance enhancement of the nMOSFET low-noise amplifier by package strainen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2006.887194en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume54en_US
dc.citation.issue1en_US
dc.citation.spage160en_US
dc.citation.epage162en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000243280500022-
dc.citation.woscount1-
Appears in Collections:Articles


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