標題: | Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs |
作者: | Wang, Sheng-Chun Su, Pin Chen, Kun-Ming Chen, Bo-Yuan Huang, Guo-Wei Hung, Cheng-Chou Huang, Sheng-Yi Fan, Cheng-Wen Tzeng, Chih-Yuh Chou, Sam 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Metal-oxide-semiconductor field-effect transistors (MOSFETs);noise;radio frequency (RF);temperature;tensile strained;van der Ziel model |
公開日期: | 1-三月-2011 |
摘要: | For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device. |
URI: | http://dx.doi.org/10.1109/TED.2010.2104153 http://hdl.handle.net/11536/9250 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2104153 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 58 |
Issue: | 3 |
起始頁: | 895 |
結束頁: | 900 |
顯示於類別: | 期刊論文 |