Performance enhancement of the nMOSFET low-noise amplifier by package strain
| dc.citation.epage | 162 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 160 | en_US |
| dc.citation.volume | 54 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Hua, W. -C. | en_US |
| dc.contributor.author | Chang, H. -L. | en_US |
| dc.contributor.author | Wang, T. | en_US |
| dc.contributor.author | Lin, C. -Y | en_US |
| dc.contributor.author | Lin, C. -P. | en_US |
| dc.contributor.author | Lu, S. S. | en_US |
| dc.contributor.author | Meng, C. C. | en_US |
| dc.contributor.author | Liu, C. W. | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:14:59Z | |
| dc.date.available | 2014-12-08T15:14:59Z | |
| dc.date.issued | 2007-01-01 | en_US |
| dc.description.abstract | The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is similar to 0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NIT reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions. | en_US |
| dc.identifier.doi | 10.1109/TED.2006.887194 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2006.887194 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/11267 | |
| dc.identifier.wosnumber | WOS:000243280500022 | |
| dc.language.iso | en_US | en_US |
| dc.subject | biaxial strain | en_US |
| dc.subject | cutoff frequency | en_US |
| dc.subject | low-noise amplifier (LNA) | en_US |
| dc.subject | noise factor | en_US |
| dc.subject | noise figure (NF) | en_US |
| dc.subject | package strain | en_US |
| dc.subject | tensile transconductance. | en_US |
| dc.title | Performance enhancement of the nMOSFET low-noise amplifier by package strain | en_US |
| dc.type | Article | en_US |