Browsing by Author "Chang, Mao-Nan"

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A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage
(2009)
Luo, Guang-Li
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Huang, Shih-Chiang
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Chung, Cheng-Ting
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Heh, Dawei
;
Chien, Chao-Hsin
For the first time, growth of high-quality Ge-rich Ge1-xSix (0 <= x <= 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n(+)-Ge1-xSix/p-Ge1-xSix is compared with n(+)-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.
Analysis of InAsN quantum dots by transmission electron microscopy and photoluminescence
(2008-10-01)
Hsu, Chiung-Chih
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Hsu, Ray-Quen
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Wu, Yue-Han
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Chi, Tung-Wei
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Chiang, Chen-Hao
Quantum dots (QDs) have great potential in optical fiber communication applications were widely recognized. The structure of molecular beam epitaxy (MBE) grew InAsN QDs were investigated by transmission electron microscopy (TEM) and measured their optical properties by photoluminescence (PL). TEM images show that the InAsN QDs are irregular or oval shaped. Some of the InAsN QDs are observed to have defects, such as dislocations at or near the surface in contrast to InAs QDs, which appear to be defect free. PL results for InAsN QDs showed a red-shifted emission peak. In addition, the InAsN emission peak is broader than InAs QDs, which supports the TEM observation that the size distribution of the InAsN QDs is more random than InAs QDs. The results show that the addition of nitrogen to InAs QDs leads to a decrease in the average size of the QDs, bring changes in the QD's shape, compositional distribution, and optical properties. (C) 2008 Published by Elsevier B.V.