A Comprehensive Study of Ge1-xSix on Ge for the Ge nMOSFETs with Tensile Stress, Shallow Junctions and Reduced Leakage

Abstract

For the first time, growth of high-quality Ge-rich Ge1-xSix (0 <= x <= 0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSix and a better thermal stability of the nickel germanide on Ge1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n(+)-Ge1-xSix/p-Ge1-xSix is compared with n(+)-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs.