Browsing by Author "Chang, T."

Now showing 1 - 4 of 4

A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity
(2008)
Chang, T.
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Kao, H. L.
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Chen, Y. J.
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Liu, S. L.
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McAlister, S. P.
We report the performance of 0.18 mu m RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz f(max), and a good adjacent channel power ratio (ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.
High Content Nd-Fe-B in Polymer Composite by Fused Depo-sition Modeling
(2018-01-01)
Chang, T.
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Jyun, J. K.
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Lee, W.
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Tsai, M.
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Cheng, C.
Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design
(2008-12-01)
Chang, T.
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Kao, H. L.
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McAlister, S. P.
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Horng, K. Y.
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Chin, Albert
We have fabricated 0.18-mu m asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-mu m MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power E performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.
The Reliability Study and Device Modeling for p-HEMT Microwave Power Transistors
(2011)
Liu, S. L.
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Chang, H. M.
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Chang, T.
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Kao, H. L.
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Cheng, C. H.
In this paper, the commercial 0.5-mu m AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the de-embedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress.