Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design

Abstract

We have fabricated 0.18-mu m asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-mu m MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power E performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.