Browsing by Author "Chang, Yu-Ming"
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Item type:Item, 3D structural construction of GaN-based light emitting diode by confocal micro-Raman spectroscopy(2016-01-01) ;Li, Heng ;Chang, Chiao-Yun ;Cheng, Hui-Yu ;Chen, Wei-LiangHuang, Yi-HsinThe key issue for light emission strength of GaN-based LEDs is the high defect density and strain in MQWs causing the electric polarization fields. In this work, we construct 3D confocal microspectroscopy to clarify strain distribution and the relationship between photoluminescence (PL) intensity and pattern sapphire substrate (PSS). From 3D construction of E-2(high) Raman and PL mapping, the dislocation in MQW can be traced to the cone tip of PSS and the difference in E-2(high) Raman mapping between substrate and surface is also measured. The ability to measure strain change in 3D structure nondestructively can be applied to explore many structural problems of GaN-based optoelectronic devices.Item type:Item, Depth-resolved confocal micro-Raman spectroscopy for characterizing GaN-based light emitting diode structures(2013-11-01) ;Chen, Wei-Liang ;Lee, Yu-Yang ;Chang, Chiao-Yun ;Huang, Huei-MinLu, Tien-ChangIn this work, we demonstrate that depth-resolved confocal micro-Raman spectroscopy can be used to characterize the active layer of GaN-based LEDs. By taking the depth compression effect due to refraction index mismatch into account, the axial profiles of Raman peak intensities from the GaN capping layer toward the sapphire substrate can correctly match the LED structural dimension and allow the identification of unique Raman feature originated from the 0.3 mu m thick active layer of the studied LED. The strain variation in different sample depths can also be quantified by measuring the Raman shift of GaN A(1)(LO) and E-2(high) phonon peaks. The capability of identifying the phonon structure of buried LED active layer and depth-resolving the strain distribution of LED structure makes this technique a potential optical and remote tool for in operando investigation of the electronic and structural properties of nitride-based LEDs. (C) 2013 AIP Publishing LLC.Item type:Item, Development of a Multisite, Closed-loop Neuromodulator for the Theranosis of Neural Degenerative Diseases(2018-01-01) ;Chen, Hsin ;Chang, Yen-Chung ;Yeh, Shih-Rung ;Hsieh, Chih-ChengTang, Kea-TiongStimulating specific brain regions has been found useful for treating neural disorders, such as the Parkinson's disease, epilepsy, depression, etc. However, how electrical stimulation modulates neural activities remains not fully understood. As animal models provide the advantage of recording and stimulating different disease-related regions simultaneously, this paper introduces the latest development of a multisite, closed-loop-controlled microsystem for investigating novel treatments on neural degenerative diseases with freely-moving rats. The algorithms for recognizing pathological neural activities automatically are also developed and realized in hardware, so as to control the stimulation in a closed loop and in real time. The pilot studies on the efficacy of treating the Parkinson's disease with closed-loop-controlled stimulation will be presented and discussed. Finally, the feasibility of modelling and probing how neural dynamics and connectivity are modulated by stimulation will be an important topic for future research.Item type:Item, Enhancing automatic Chinese essay scoring system from figures-of-speech(2006-01-01) ;Chang, Tao-Hsing ;Lee, Chia-Hoang ;Chang, Yu-Ming ;資訊工程學系Department of Computer ScienceChinese automated essay scoring (CAES) is a very important tool for many educational researches. However, none of the methods for retrieving features in English essays is applicable to Chinese writings because Chinese grammar parsers cannot produce reliable and useful syntactic features. CAES systems must explore other distinct features in Chinese writing. This paper proposes a method for retrieving two Chinese figures-of-speech from essays and to predict the scores of essays based on the two skills used in the essays. A scoring model based on ID3 decision tree algorithm will validate and show that the proposed method increases the performance of CAES effectively.Item type:Item, Evaluating the abrasive wear of Zn(1-x)Mn(x)O heteroepitaxial layers using a nanoscratch technique(2010-08-01) ;Chang, Yu-Ming ;Wen, Hua-Chiang ;Yang, Chu-Shou ;Lian, DermingTsai, Chien-HuangIn this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn(1-x)Mn(x)O epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn(1-x)Mn(x)O epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn(1-x)Mn(x)O films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn(1-x)Mn(x)O films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn(1-x)Mn(x)O epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Evaluating the abrasive wear of Zn1-xMnxO heteroepitaxial layers using a nanoscratch technique(2010-08-01) ;Chang, Yu-Ming ;Wen, Hua-Chiang ;Yang, Chu-Shou ;Lian, DermingTsai, Chien-HuangIn this study, we used nanoscratch techniques under a ramping load to evaluate the abrasive wear of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown through molecular beam epitaxy (MBE) on sapphire substrates. We analyzed the surface roughness and damage using atomic force microscopy (AFM) and nano-indenter techniques. The scratched surfaces of the Zn1-xMnxO epilayers were significantly different for the various Mn compositions. AFM imaging of the Zn1-xMnxO films revealed that pileup phenomena were important on both sides of each scratch. During the scratching process, we found that cracking dominated in the case of Zn1-xMnxO films while ploughing; also we observed lower values of the coefficient of friction and shallower penetration depths for the films upon increasing the Mn content (x) from 0 to 0.16, suggesting that higher Mn contents provided the Zn1-xMnxO epilayers with higher shear resistances, enhanced by the presence of MnO bonds. (C) 2010 Elsevier Ltd. All rights reserved.Item type:Item, Exploring GPS Data for Traffic Status Estimation(2009) ;Chang, Yu-Ming ;Wei, Ling-Yin ;Lin, Chun-Shuo ;Jung, Chen-HenChen, I-HungTraffic status plays an important role in navigation systems. To estimate traffic status, expensive sensors are deployed, which is not cost efficient. In view of the growth of GPS navigation services, in this paper, we propose two algorithms to estimate traffic status of road segments in our CarWeb platform. To evaluate our proposed algorithms, we implement the proposed algorithms in our CarWeb platform that is used to collect GPS data points from cars. Extensive experiments are conducted on real datasets and experimental results indicate that our algorithms can provide desirable predictions of traffic status.Item type:Item, Giant colloidal silver crystals for low-loss linear and nonlinear plasmonics(2015-07-01) ;Wang, Chun-Yuan ;Chen, Hung-Ying ;Sun, Liuyang ;Chen, Wei-LiangChang, Yu-MingThe development of ultrasmooth, macroscopic-sized silver (Ag) crystals exhibiting reduced losses is critical to fully characterize the ultimate performance of Ag as a plasmonic material, and to enable cascaded and integrated plasmonic devices. Here we demonstrate the growth of single-crystal Ag plates with millimetre lateral sizes for linear and nonlinear plasmonic applications. Using these Ag crystals, surface plasmon polariton propagation lengths beyond 100 mm in the red wavelength region are measured. These lengths exceed the predicted values using the widely cited Johnson and Christy data. Furthermore, they allow the fabrication of highly reproducible plasmonic nanostructures by focused ion beam milling. We have designed and fabricated double-resonant nanogroove arrays using these crystals for spatially uniform and spectrally tunable second-harmonic generation. In conventional 'hot-spot'-based nonlinear processes such as surface-enhanced Raman scattering and second-harmonic generation, strong enhancement can only occur in random, localized regions. In contrast, our approach enables uniform nonlinear signal generation over a large area.Item type:Item, Induced NH2 bonding of carbon nanotubes using NH3 plasma-enhanced chemical vapor deposition(2012-04-01) ;Chiou, Ai-Huei ;Chang, Yu-Ming ;Wu, Wen-Fa ;Chou, Chang-PingHsu, Chun-YaoPlasma-enhanced chemical vapor deposition was used to modify the multiwall carbon nanotubes (MWCNTs) using ammonia (NH3) plasma. For various durations of NH3 plasma treatment, a scanning electron microscope, X-ray, Raman spectroscopy and contact angle measurement were used to ascertain several characteristics of the MWCNTs. The experimental results show that: (1) the length of the MWCNTs is reduced, if the duration of the plasma treatment is increased; (2) the NH3 plasma treatment can incorporate amine (NH2-) or amino (NH-) functional groups onto the MWCNT surface; (3) the plasma treated carbon nanotubes become more hydrophilic.Item type:Item, Intrinsic Carrier Transport of Phase-Pure Homologous 2D Organolead Halide Hybrid Perovskite Single Crystals(2018-12-27) ;Li, Min-Ken ;Chen, Tzu-Pei ;Lin, Yen-Fu ;Raghavan, Chinnambedu MurugesanChen, Wei-LiangThis work reveals the intrinsic carrier transport behavior of 2D organolead halide perovskites based on phase-pure homologous (n = 1, 2, and 3) Ruddelsden-Popper perovskite (RPP) (BA)(2)(MA)(n-1)PbnI3n+1 single crystals. The 2D perovskite field effect transistors with high-quality exfoliated 2D perovskite bulk crystals are fabricated, and characteristic output and transfer curves are measured from individual single-crystal flakes with various n values under different temperatures. Unipolar n-type transport dominated the electrical properties of all these 2D RPP single crystals. The transport behavior of the 2D organolead halide hybrid perovskites exhibits a strong dependence on the n value and the mobility substantially increases as the ratio of the number of inorganic perovskite slabs per organic spacer increases. By extracting the effect of contact resistances, the corrected mobility values for n = 1, 2, and 3 are 2 x 10(-3), 8.3 x 10(-2), and 1.25 cm(2) V-1 s(-1) at 77 K, respectively. Furthermore, by combining temperature-dependent electrical transport and optical measurements, it is found that the origin of the carrier mobility dependence on the phase transition for 2D organolead halide perovskites is very different from that of their 3D counterparts. Our findings offer insight into fundamental carrier transport behavior of 2D organic-inorganic hybrid perovskites based on phase-pure homologous single crystals.Item type:Item, Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals(2020-04-28) ;Lu, Li-Syuan ;Chen, Guan-Hao ;Cheng, Hui-Yu ;Chuu, Chih-PiaoLu, Kuan-ChengPalladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 degrees C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.Item type:Item, Mesoporous silica reinforced by silica nanoparticles to enhance mechanical performance(2007-01-15) ;Luo, Jen-Tsung ;Wen, Hua-Chiang ;Chang, Yu-Ming ;Wu, Wen-FaChou, Chang-PinSilica nanoparticle/mesoporous silica composite films were prepared by direct mixing with mechanical stirring and thermal imidization. The structural morphology was elucidated by scanning electron microscopy and the surface of the film was imaged by atomic force microscopy. The functional groups and desorption process of the films were elucidated by Fourier transform infrared spectroscopy and thermal desorption spectroscopy. The mechanical properties were investigated using a nanoindenter system. The gel matrix and the filler are very compatible because they have similar molecular content. The composite films had a higher mechanical strength than pure porous silica film. Their strength is related to the silica nanoparticle content. The interfacial compatibility, dispersion effect, and interfacial strength also affect the mechanical strength of composite films. (c) 2006 Elsevier Inc. All rights reserved.Item type:Item, Nanoscratch study of Zn(1-x)Mn(x)O heteroepitaxial layers(2010-10-15) ;Chang, Yu-Ming ;Chang, Zue-Chin ;Lian, Derming ;Yang, Chu-ShouYau, Wei-HungWe investigated the nanotribological properties of Zn(1-x)Mn(x)O epilayers (0 <= x <= 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (mu) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques. The nanoscratch system gave the mu value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn(1-x)Mn(x)O epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn(1-x)Mn(x)O epilayers can be identified by their nanotribological behavior. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Nanoscratch study of Zn1-xMnxO heteroepitaxial layers(2010-10-15) ;Chang, Yu-Ming ;Chang, Zue-Chin ;Lian, Derming ;Yang, Chu-ShouYau, Wei-HungWe investigated the nanotribological properties of Zn1-xMnxO epilayers (0 <= x <= 0.16) grown by molecular beam epitaxy (MBE) on sapphire substrates. The surface roughness and friction coefficient (mu) were analyzed by means of atomic force microscopy (AFM) and hysitron triboscope nanoindenter techniques. The nanoscratch system gave the mu value of the films ranging from 0.17 to 0.07 and the penetration depth value ranging 294-200nm when the Mn content was increased from x = 0 to 0.16. The results strongly indicate that the scratch wear depth under constant load shows that higher Mn content leads to Zn1-xMnxO epilayers with higher shear resistance, which enhances the Mn-O bond. These findings reveal that the role of Mn content on the growth of Zn1-xMnxO epilayers can be identified by their nanotribological behavior. (C) 2010 Elsevier B.V. All rights reserved.Item type:Item, Plasmonic Metasurfaces for Nonlinear Optics and Quantitative SERS(2016-08) ;Gwo, Shangjr ;Wang, Chun-Yuan ;Chen, Hung-Ying ;Lin, Meng-HsienSun, LiuyangPlasmonic metasurfaces consist of two-dimensional arrays of metallic nanoresonators (plasmonic "meta-atoms"), which exhibit collective and tunable resonance properties controlled by electromagnetic near-field coupling. These man-made surfaces can produce a range of unique optical properties unattainable with natural materials. In this review, we focus on the emerging applications of metasurfaces with precisely engineered plasmonic properties for nonlinear optics and surface-enhanced Raman spectroscopy (SERS). In practice, these applications are quite susceptible to material losses and structural imperfections, such as variations in size, shape, periodicity of meta-atoms, and their material states (crystallinity, impurity, and oxidation, etc.). In these aspects, conventional top-down lithographic techniques are facing major challenges due to inherent limitations in intrinsic material properties and material quality introduced during growth, synthesis, and fabrication processes, as well as achievable lithographic resolution. Moreover, they are prohibitively expensive and time-consuming for fabrication over large areas. Here, we show that colloidal silver crystals (millimeter-sized single-crystalline plates and thiolate-capped nanoparticles) synthesized by solution-based chemical methods are excellent material platforms for the fabrication of high-quality plasmonic metasurfaces. In, particular, both top-down (focused ion-beam milling) and bottom-up (centimeter-scale self-assembly) techniques can be exploited to generate uniform and precisely engineered colloidal metasurfaces for broadband tunable (across the full visible range) second-harmonic generation and quantitative SERS at the single-molecule level.Item type:Item, The roles of hydrophobic group on the surface of ultra low dielectric constant porous silica film during thermal treatment(2007-06-25) ;Luo, Jen-Tsung ;Wu, Wen-Fa ;Wen, Hua-Chiang ;Wan, Ben-ZuChang, Yu-MingPorous silica films with ultra low-k (below 2) and low leakage current densities (10(-8) A/cm(2) or lower at an electric field of 1.8 MV/cm) were prepared by the surfactant-template method. Hexamethyldisilazane (HMDS), a surface modification agent, was utilized to yield hydrophobic groups on the surface of porous silica film to prevent the absorption of moisture. It effectively retained the low permittivity properties of the films. Thermal treatment at high temperature (> 350 degrees C) destroyed surface hydrophobic groups and generated hydrophilic groups (Si-OH), which replaced the surface Si(CH3)(3) groups, and resulted in the absorption of moisture. However, Si-OH not only resulted in the absorption of moisture but also initiated the formation of trimethylsilyl groups on the surface by HMDS. When the damaged film is repaired by HMDS again, the k value falls to its initial value (which may be below 1.6). A denser hydrophobic low-k film is formed and the electrical properties are improved. (C) 2007 Elsevier B.V. All rights reserved.Item type:Item, Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy(2017-03-30) ;Li, Heng ;Cheng, Hui-Yu ;Chen, Wei-Liang ;Huang, Yi-HsinLi, Chi-KangWe performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1-xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1-xN/GaN MQWs active layer.Item type:Item, Three dimensional compressive strain and its effect on optical properties of GaN-based light emitting diode grown on patterned sapphire substrate by confocal spectromicroscopy(2017-01-01) ;Li, Heng ;Cheng, Hui-Yu ;Chen, Wei-Liang ;Huang, Yi-HsinLi, Chi-KangWe performed depth-resolved spectral mappings of GaN-based LED and results showed that the strain distribution propagating from PSS-GaN heterointerface toward surface and the PL intensity are spatially correlated. Numerical simulation based on indium composition distribution led to a radiative recombination rate distribution shows agreement with the experimental PL intensity distribution.Item type:Item, Ultralow Schottky Barriers in Hexagonal Boron Nitride-Encapsulated Monolayer WSe2 Tunnel Field-Effect Transistors(2020-04-22) ;Pande, Gaurav ;Siao, Jyun-Yan ;Chen, Wei-Liang ;Lee, Chien-JuSankar, RamanTo explore the potential of field-effect transistors (FETs) based on monolayers (MLs) of the two-dimensional semiconducting channel (SC) for spintronics, the two most important issues are to ensure the formation of variable low-resistive tunnel ferromagnetic contacts (FCs) and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts, and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated ML WSe2 FETs using bilayer hexagonal boron nitride (h-BN) as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in ML WSe2 FETs with the current-in-plane geometry that yields hole mobilities of similar to 38.3 cm(2) V-1 s(-1) at 240 K and on/off ratios of the order of 10(7), limited by the contact regions. We have achieved an ultralow effective Schottky barrier (similar to 5.34 meV) with an encapsulated tunneling device as opposed to a nonencapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures, and such control over the barrier heights opens up the possibilities for WSe2-based spintronic devices.