Browsing by Author "Chang, Yuwen"

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A High-Speed HBT Prescaler Based on the Divide-by-Two Topology
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Lin, Yi-Chen
;
Huang, Guo-Wei
This paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.
Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads
(2008-02-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.
Injection-locked Galnp/GaAs HBT frequency divider with stacked transformers
(2007-10-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Huang, Guo-Wei
;
電信工程研究所
The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequecy divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mV the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals. Inc.