Browsing by Author "Chen, Bo-Ting"

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A new pixel circuit for driving organic light emitting diodes with low temperature polycrystalline thin film transistors
(2005)
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Pai, Cheng-Chiu
;
Tsai, Chun-Chien
;
Cheng, Huang-Chung
A new active matrix organic light emitting diode (AM-OLED) pixel circuit design, based on the low-temperature polycrystalline thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. The voltage-programming pixel circuit is formed by five n-type TFTs. one additional control signal, and a storage capacitor. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
A New Pixel Circuit for Driving Organic Light-Emitting Diode With Low Temperature Polycrystalline Silicon Thin-Film Transistors
(2005-09-01)
Tai, Ya-Hsiang
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Tsai, Chun-Chien
;
Chiang, Ko-Yu
A new pixel circuit design for active matrix organic light-emitting diode (AMOLED), based on the low-temperature polycrystalline silicon thin-film transistors (LTPS-TFTs) is proposed and verified by SPICE simulation. Threshold voltage compensation pixel circuit consisting of four n-type TFTs, one p-type TFT, one additional control signal, and one storage capacitor is used to enhance display image quality. The simulation results show that this pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Fabrication of location-controlled silicon crystal grains by combining excimer laser irradiation with nanometer-sized A-Si
(2007)
Tsai, Chun-Chien
;
Chang, Ting-Kuo
;
Chen, Hsiu-Hsin
;
Chen, Bo-Ting
;
Cheng, Huang-Chung
In this paper, location-controlled silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-mu m-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm(2)/Vs can be, fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated silicon grains are essential to high performance and good uniformity thin film transistors.
High-performance self-aligned bottom-gate low-temperature poly-silicon thin-film transistors with excimer laser crystallization
(2007-07-01)
Tsai, Chun-Chien
;
Chen, Hsu-Hsin
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Chen, Bo-Ting
;
Cheng, Huang-Chung
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電子工程學系及電子研究所
In this letter, high-performance bottom-gate (BG) low-temperature poly-silicon thin-film transistors (TFTs) with excimer laser crystallization have been demonstrated using self-aligned (SA) backside photolithography exposure. The grains with lateral grain size of about 0.75 mu m could be artificially grown in the channel region via the super-lateral-growth phenomenon fabricated by excimer laser irradiation. Consequently, SA-BG TFTs with the channel length of 1 pm exhibited field-effect mobility reaching 193 cm(2)/V center dot s without hydrogenation, while the mobility of the conventional non-SA-BG TFT and conventional SA top-gate one were about 17.8 and 103 cm(2)/V center dot s, respectively. Moreover, SA-BG TFTs showed higher device uniformity and wider process window owing to the homogenous lateral grains crystallized from the channel steps near the BG edges.
INTEGRATED CMOS MEMS LIQUID CAPACITIVE INCLINOMETER
(2015)
Chiu, Yi
;
Chen, Bo-Ting
;
Hong, Hao-Chao
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電機學院
;
College of Electrical and Computer Engineering
This paper reports a miniaturized CMOS MEMS capacitive inclinometer with dielectric liquid sensing medium in the reservoir on top of the CMOS substrate. A DFR/glass cap is bonded to the CMOS chip to form a reservoir for the sensing liquid. Rotating/tilting the sensor changes the electrode area covered by the liquid and leads to a change of capacitance. The packaged sensor had a dimension of 2.4x2.4x1.2 mm(3). Experimental results obtained by the on-chip readout circuit showed the proposed inclinometer had a sensitivity of 0.48 mV/deg in the linear range between +/- 60 degrees. With proper calibration, the linear range can be extended to +/- 90 degrees.
Investigation of source-follower type analog buffer using low temperature poly-Si TFTs
(2007-03-01)
Chen, Bo-Ting
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Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Wei, Kai-Fang
;
Tsai, Chun-Chien
A new source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analog buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) is proposed and measured. Threshold voltage compensation circuit with two n-type thin film transistors, a capacitor, and four switches structure is used to enhance image quality for the display. The threshold voltage difference of driving TFTs and the unsaturated of output voltage are eliminated in this circuit. An active load is added and a calibration operation is applied to study the effects on the source follower circuit, the transistor operation mode region is also discussed. The proposed circuit is capable of minimizing the variation from both the signal timing and the device characteristics through the simulation and measured results. (C) 2007 Elsevier Ltd. All rights reserved.
Job-Level Proof-Number Search for Connect6
(2011)
Wu, I-Chen
;
Lin, Hung-Hsuan
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Lin, Ping-Hung
;
Sun, Der-Johng
;
Chan, Yi-Chih
This paper proposes a new approach for proof number (PN) search, named job-level PN (JL-PN) search, where each search tree node is evaluated or expanded by a heavy-weight job, which takes normally over tens of seconds. Such JL-PN search is well suited for parallel processing, since these jobs are allowed to be performed by remote processors independently. This paper applies JL-PN search to solving automatically several Connect6 positions including openings on desktop grids. For some of these openings, so far no human expert had been able to find a winning strategy. Our experiments also show that the speedups for solving the test positions are roughly linear, fluctuating from sublinear to superlinear. Hence, JL-PN search appears to be a quite promising approach to solving games.
Low temperature polycrystalline silicon thin film transistors fabricated by amorphous silicon spacer structure with pre-patterned TEOS oxide layer
(2005)
Cheng, Huang-Chung
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Tsai, Chun-Chien
;
Lu, Jian-Hao
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Chang, Ting-Kuo
;
Lin, Ching-Wei
In this paper, location-controlled grain growth with a-Si spacer structure was fabricated. Consequently, High-performance poly-Si TFTs with field-effect mobility exceeding 367 cm(2)/V-s and high device uniformity have been fabricated. The excellent electrical characteristics is attributed to large grain and grain boundary elimination in the channel region.
New analog buffer circuit using low temperature polycrystalline thin film transistors for active matrix displays
(2005)
Tai, Ya-Hsiang
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Wei, Ying-Jyun
;
Pai, Cheng-Chiu
Two types new simple source follower circuit using low-temperature polycrystalline silicon thin film transistors (LTPS-TFTs) as analogue buffer for the integrated data driver circuit of active matrix liquid crystal displays (AMLCDs) and active matrix light emitting diodes (AMOLEDs) are proposed. Analogue buffer designs are discussed and verified by SPICE simulation results.
New pixel circuits for driving organic light emitting diodes with low temperature polycrystalline Si thin film transistors
(2005)
Cheng, Huang-Chung
;
Chen, Bo-Ting
;
Kuo, Yu-Ju
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
Two new pixel circuits for active matrix organic light emitting diode (AM-OLED), based on the low-temperature polycrystalline Si thin-film transistors (LTPS-TFTs) are proposed and the Vth compensation ability is verified by SPICE simulation and measured results. The voltage-programming pixel circuits are formed by five TFTs, one additional control signal, and one storage capacitor. The simulation and measured results show that the pixel circuit has high immunity to the variation of poly-Si TFT characteristics.
Periodically lateral silicon grains fabricated by excimer laser irradiation with a-Si spacers for LTPS TFTs
(2007)
Cheng, Huang-Chung
;
Tsai, Chun-Chien
;
Lu, Jian-Hao
;
Chen, Hsu-Hsin
;
Chen, Bo-Ting
Low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a periodic lateral silicon grain structure have been demonstrated to exhibit high-performance electrical characteristics via the amorphous silicon spacers above the amorphous silicon film crystallized with excimer laser. Amorphous silicon spacers allowed the bottom of the under-layered amorphous silicon film to serve as seed crystals. The periodic grain structure could be artificially controlled via the super lateral growth phenomenon during excimer laser irradiation. Consequently, such periodically large and lateral grains in the TFTs would achieve high field-effect-mobility of 298 cm(2)/V s, as compared with the conventional ones of 128 cm(2)/V s. In addition, the uniformity of device-to-device could be improved due to this location-manipulated lateral silicon grains. (c) 2006 The Electrochemical Society.
Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization
(2007-11-12)
Tsai, Chun-Chien
;
Lee, Yao-Jen
;
Chiang, Ko-Yu
;
Wang, Jyh-Liang
;
Lee, I-Che
In this paper, location-controlled silicon crystal grains are fabricated by the excimer laser crystallization method which employs amorphous silicon spacer structure and prepatterned thin films. The amorphous silicon spacer in nanometer-sized width formed using spacer technology is served as seed crystal to artificially control superlateral growth phenomenon during excimer laser irradiation. An array of 1.8-mu m-sized disklike silicon grains is formed, and the n-channel thin-film transistors whose channels located inside the artificially-controlled crystal grains exhibit higher performance of field-effect-mobility reaching 308 cm(2)/V s as compared with the conventional ones. This position-manipulated silicon grains are essential to high-performance and good uniformity devices. (c) 2007 American Institute of Physics.
Source-Follower Type Analog Buffer Using Low Temperature Poly-Si TFTs for AMLCDs
(2006)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
;
Chen, Hsu-Hsin
A new source follower circuit for the integrated circuit of AMLCDs is proposed. Active load is added and calibration operation is applied to compensate the circuits. Proposed circuit is capable of minimizing variation from both timing and device variations through measured results, the uniformity and bias effect are discussed.
Threshold-voltage-compensation methods for AMOLED pixel and analog buffer circuits
(2006-09-01)
Chen, Bo-Ting
;
Tai, Ya-Hsiang
;
Wei, Ying-Jyun
;
Tsai, Chun-Chien
;
Huang, Chun-Yao
New pixel-circuit designs for active-matrix organic light-emitting diodes (AMOLEDs) and a new analog buffer circuit for the integrated data-driver circuit of active-matrix liquid-crystal displays (AMLCDs) and AMOLEDs, based on low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), were proposed and verified by SPICE simulation and measured results. Threshold-voltage-compensation pixel circuits consisting of LTPS-TFTs, an additional control signal line, and a storage capacitor were used to enhance display-image uniformity. A diode-connected concept is used to calibrate the threshold-voltage variation of the driving TFT in an AMOLED pixel circuit. An active load is added and a calibration operation is applied to study the influences on the analog buffer circuit. The proposed circuits are shown to be capable of minimizing the variation from the device characteristics through the simulation and measured results.