Fabrication of location-controlled silicon crystal grains by combining excimer laser irradiation with nanometer-sized A-Si

Abstract

In this paper, location-controlled silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-mu m-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm(2)/Vs can be, fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated silicon grains are essential to high performance and good uniformity thin film transistors.