Fabrication of location-controlled silicon crystal grains by combining excimer laser irradiation with nanometer-sized A-Si

dc.citation.epage	546	en_US
dc.citation.spage	541	en_US
dc.citation.volume	910	en_US
dc.contributor.author	Tsai, Chun-Chien	en_US
dc.contributor.author	Chang, Ting-Kuo	en_US
dc.contributor.author	Chen, Hsiu-Hsin	en_US
dc.contributor.author	Chen, Bo-Ting	en_US
dc.contributor.author	Cheng, Huang-Chung	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.date.accessioned	2014-12-08T15:10:20Z
dc.date.available	2014-12-08T15:10:20Z
dc.date.issued	2007	en_US
dc.description.abstract	In this paper, location-controlled silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-mu m-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm(2)/Vs can be, fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated silicon grains are essential to high performance and good uniformity thin film transistors.	en_US
dc.identifier.isbn	978-1-55899-866-7	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.journal	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology 2006	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/7890
dc.identifier.wosnumber	WOS:000245670700077
dc.language.iso	en_US	en_US
dc.title	Fabrication of location-controlled silicon crystal grains by combining excimer laser irradiation with nanometer-sized A-Si	en_US
dc.type	Proceedings Paper	en_US

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