Browsing by Author "Chen, Bo-Wei"

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A 0.6V, 1.3GHZ DYNAMIC COMPARATOR WITH CROSS-COUPLED LATCHES
(2015)
Kuo, Bo-Jyun
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Chen, Bo-Wei
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Tsai, Chia-Ming
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交大名義發表
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National Chiao Tung University
This paper presents a sub-1V dynamic comparator with cross-coupled latches at multi-GHz operation. The low-voltage cross-coupled latches structure with a separated tail current can be used to optimize the speed and the offset in the latched stage, respectively. A high speed readout circuit is also proposed to further enhance the speed of the comparator. With BER=10(-9), the comparator achieves 143fJ at 3.3GHz and a 0.9V supply, which decreases to only 49fJ at 1.3GHz and a 0.6V supply. Both measured results are based on the input differential voltage of only 4.2mV. The comparator is implemented in 65nm CMOS technology and the chip area of the core circuit occupies 265 mu m(2).
A 3-GHz, 22-ps/dec Dynamic Comparator using Negative Resistance Combined with Input Pair
(2010-01-01)
Chen, Bo-Wei
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Wang, Jen-Peng
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Tsai, Chia-Ming
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
A high speed, low delay/log(Delta Vin) dynamic comparator using negative resistance combined with input differential pair is proposed and designed in TSMC 90nm CMOS process technology. The delay/log(Delta Vin) of the comparator is 22ps/dec and consumes 213 mu W at 3GHz clock rate and 1.2V supply. The standard deviation of the comparator input refer offset is 25mV.
Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors
(2017-03-01)
Chen, Guan-Fu
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Chang, Ting-Chang
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Chen, Hua-Mao
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Chen, Bo-Wei
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Chen, Hong-Chih
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.
Abnormal hump in capacitance-voltage measurements induced by ultraviolet light in a-IGZO thin-film transistors
(2017-01-09)
Tsao, Yu-Ching
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Chang, Ting-Chang
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Chen, Hua-Mao
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Chen, Bo-Wei
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Chiang, Hsiao-Cheng
This work demonstrates the generation of abnormal capacitance for amorphous indium-gallium-zinc oxide (a-InGaZnO4) thin-film transistors after being subjected to negative bias stress under ultraviolet light illumination stress (NBIS). At various operation frequencies, there are two-step tendencies in their capacitance-voltage curves. When gate bias is smaller than threshold voltage, the measured capacitance is dominated by interface defects. Conversely, the measured capacitance is dominated by oxygen vacancies when gate bias is larger than threshold voltage. The impact of these interface defects and oxygen vacancies on capacitance-voltage curves is verified by TCAD simulation software. Published by AIP Publishing.
Combined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistors
(2018-02-01)
Yang, Chung-I
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Bo-Wei
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Chou, Wu-Ching
This paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.
Design of the Multi-channel Electroencephalography-based Brain-Computer Interface with Novel Dry Sensors
(2012)
Wu, Shang-Lin
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Liao, Lun-De
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Liou, Chang-Hong
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Chen, Shi-An
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Ko, Li-Wei
The traditional brain-computer interface (BCI) system measures the electroencephalography (EEG) signals by the wet sensors with the conductive gel and skin preparation processes. To overcome the limitations of traditional BCI system with conventional wet sensors, a wireless and wearable multi-channel EEG-based BCI system is proposed in this study, including the wireless EEG data acquisition device, dry spring-loaded sensors, a size-adjustable soft cap. The dry spring-loaded sensors are made of metal conductors, which can measure the EEG signals without skin preparation and conductive gel. In addition, the proposed system provides a size-adjustable soft cap that can be used to fit user's head properly. Indeed, the results are shown that the proposed system can properly and effectively measure the EEG signals with the developed cap and sensors, even under movement. In words, the developed wireless and wearable BCI system is able to be used in cognitive neuroscience applications.
Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors
(2018-01-01)
Yang, Chung-I.
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Li-Hui
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Chen, Bo-Wei
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15 V. The current-voltage curves show that this degradation is caused by the effective channel length (L-eff) being shorter than the mask channel length (L). Using the transmission line method to extract Leff, we discover that the degradation will be completely suppressed by an annealing treatment. As a result, the degradation mechanism of shorter channel length a-IGZO thin film transistors is due to oxygen-vacancies which are located between the channel and the source/drain junction.
Effect of mechanical-strain-induced defect generation on the performance of flexible amorphous In-Ga-Zn-O thin-film transistors
(2016-12)
Liao, Po-Yung
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Chang, Ting-Chang
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Su, Wan-Ching
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Chen, Yu-Jia
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Chen, Bo-Wei
In this study, we investigate the effect of mechanical strain on the performance of flexible amorphous In-Ga-Zn-O (a-.InGaZnO) thin-film transistors. Drain current-gate voltage (ID-VG) and capacitance-voltage (C-V) transfer curves are measured to analyze the degradation behavior. The ID-VG characteristic exhibits a clear negative shift under mechanical strain regardless of the tension or compression state. In addition, the C-V characteristic curves show a leftward shift with extra distortion or stretching out under mechanical strain. This indicates that InGaZnO generates additional defects under this mechanical strain, a phenomenon that can be attributed to the generation of mechanical-strain-induced oxygen vacancies on the flexible a-InGaZnO TFTs. (C) 2016 The Japan Society of Applied Physics.
Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide
(2016-12-01)
Chen, Bo-Wei
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Chang, Ting-Chang
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Hung, Yu-Ju
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Huang, Shin-Ping
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Chen, Hua-Mao
This letter investigates flexible polycrystalline silicon thin film transistor performance variation due to different buffer layer thicknesses. In flexible electronics, thermal expansion stress during device fabrication is inevitable. A thicker SiO2 buffer demonstrates better endurance to thermal expansion stress from the polyimide substrate during device annealing. However, if the SiO2 buffer thickness is above a critical point, its weak heat dissipation capability causes the optimal ELA crystallization condition to shift. A thermal expansion stress simulation and TEM photos were utilized to verify performance variation. Furthermore, a similar trend was observed in electrical characteristics after negative bias temperature instability.
Effects of Repetitive Mechanical Bending Strain on Various Dimensions of Foldable Low Temperature Polysilicon TFTs Fabricated on Polyimide
(2016-08)
Chen, Bo-Wei
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Chang, Ting-Chang
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Hung, Yu-Ju
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Huang, Shin-Ping
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Liao, Po-Yung
This letter investigates the effect of repeated uniaxial mechanical stress on bias-induced degradation behavior in polycrystalline thin-film transistors (TFTs). After 100 000 iterations of channel-width-direction mechanical compression, serious threshold voltage degradation and an abnormal hump are observed. Simulation indicates that the strongest mechanical stress occurs at both sides of the channel edge, between the polycrystalline silicon and gate insulator. Since these stress points produce oxide traps in the gate insulator, the degradation of threshold voltage shift and parasitic current path can be attributed to electron trapping at these intense mechanical stress points. In addition, the degradation becomes serious with diminishing TFT size.
Gaming control using a wearable and wireless EEG-based brain-computer interface device with novel dry foam-based sensors
(2012-01-28)
Liao, Lun-De
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Chen, Chi-Yu
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Wang, I-Jan
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Chen, Sheng-Fu
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Li, Shih-Yu
A brain-computer interface (BCI) is a communication system that can help users interact with the outside environment by translating brain signals into machine commands. The use of electroencephalographic (EEG) signals has become the most common approach for a BCI because of their usability and strong reliability. Many EEG-based BCI devices have been developed with traditional wet- or micro-electro-mechanical-system (MEMS)-type EEG sensors. However, those traditional sensors have uncomfortable disadvantage and require conductive gel and skin preparation on the part of the user. Therefore, acquiring the EEG signals in a comfortable and convenient manner is an important factor that should be incorporated into a novel BCI device. In the present study, a wearable, wireless and portable EEG-based BCI device with dry foam-based EEG sensors was developed and was demonstrated using a gaming control application. The dry EEG sensors operated without conductive gel; however, they were able to provide good conductivity and were able to acquire EEG signals effectively by adapting to irregular skin surfaces and by maintaining proper skin-sensor impedance on the forehead site. We have also demonstrated a real-time cognitive stage detection application of gaming control using the proposed portable device. The results of the present study indicate that using this portable EEG-based BCI device to conveniently and effectively control the outside world provides an approach for researching rehabilitation engineering.
Identical Off-state Current Raise Induced by Photo-induced Schottky Barrier Lowering in a-InGaZnO4 Thin Film Transistors
(2016)
Chen, Hua-Mao
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Chang, Ting-Chang
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Liao, Po-Yung
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Chiang, Hsiao-Cheng
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Chen, Ching-En
This work studies the mechanism of identical photoinduced leakage current in a-InGaZnO4 thin film transistors during reverse gate voltage sweep. There is the identical off-state current with the reverse sweep under UV light irradiation, and the photocurrent for UV light exposure region near the source electrode is more significant than that near the drain electrode, which is different from photocurrent mechanism of low temperature polysilicon TFTs. This is because the photo-generated electrons increase the carrier concentration in a-InGaZnO4 bulk, causing the reduced depletion width of the active layer. Therefore, the back channel of active layer is out of gate control.
Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
(2017-06-26)
Liao, Po-Yung
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Chang, Ting-Chang
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Su, Wan-Ching
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Chen, Bo-Wei
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Chen, Li-Hui
This letter investigates repeated uniaxial mechanical stress-induced degradation behavior in flexible amorphous In-Ga-Zn-O thin-film transistors (TFTs) of different geometric structures. Two types of via-contact structure TFTs are investigated: symmetrical and UI structure (TFTs with Iand U-shaped asymmetric electrodes). After repeated mechanical stress, I-V curves for the symmetrical structure show a significant negative threshold voltage (VT) shift, due to mechanical stress-induced oxygen vacancy generation. However, degradation in the UI structure TFTs after stress is a negative VT shift along with the parasitic transistor characteristic in the forward-operation mode, with this hump not evident in the reverse-operation mode. This asymmetrical degradation is clarified by the mechanical strain simulation of the UI TFTs. Published by AIP Publishing.
Investigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structures
(2017-12-31)
Yang, Chung-I
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Chang, Ting-Chang
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Chen, Bo-Wei
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Chou, Wu-Ching
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Liao, Po-Yung
This work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an important role in hot carrier stress-induced degradation, which leads to carrier-trapping in the etch stop layer between the active layer and the redundant drain electrode. Hot carrier stress has different influences on device characteristics, depending on materials and structure. Hot carrier stress causes more electron trapping in the etch stop layer below the redundant drain electrode in the presence of smaller source/drain metal work function or a longer redundant drain electrode. To further verify the mechanisms of the degradation behavior, the barrier height for Fowler-Nordheim-tunneling is extracted by a fitting charge trapping model. It is found that the barrier height for Fowler-Nordheim-tunneling is different for different source/drain materials.
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
(2017-09-25)
Chiang, Hsiao-Cheng
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Bo-Wei
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Tsao, Yu-Ching
This letter investigates the effect of negative bias temperature stress (NBTS) on amorphous InGaZnO4 thin film transistors with copper electrodes. After 2000 s of NBTS, an abnormal subthreshold swing and on-current (I-on) degradation is observed. The recovery of the Id-Vg curve after either annealing or positive bias temperature stress suggests that there are some native mobile copper ions in the active layer. Both the existence of copper and the degradation mechanism can be confirmed by AC stress with different frequencies and by transmission electron microscope energy-dispersive X-ray spectroscopy analysis. Published by AIP Publishing.
Investigation of Abnormal Off-Current in p-Channel Double Diffused Drain Metal-Oxide-Semiconductor Transistors after Hot Carrier Stress
(2016)
Chen, Ching-En
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Chang, Ting-Chang
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Lu, Ying-Hsin
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Chen, Hua-Mao
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Chen, Bo-Wei
This paper studies the degradation behaviors in IV characteristics and the corresponding improvement for p-channel double diffused drain metal-oxide-semiconductor (DDDMOS) transistors after hot carrier stress (HCS). There is an apparent current which is flowed from source to drain in the off-region after HCS. According to the IV characteristic comparisons between different device structures and ISE-TCAD simulation results, the location and mechanism of this abnormal off-current can be demonstrated. Furthermore, this off-current is suppressed effectively by the different process flows in STI fabrication for this DDDMOS device.
Role of H2O Molecules in Passivation Layer of a-InGaZnO Thin Film Transistors
(2017-04-01)
Chien, Yu-Chieh
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Chang, Ting-Chang
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Chiang, Hsiao-Cheng
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Chen, Hua-Mao
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Tsao, Yu-Ching
This letter analyzes performance and reliability of inverted staggered type amorphous indium-gallium-zinc oxide devices in a moist environment with H2O molecules in the passivation layer. There is a negative threshold voltage shift (Delta Vth) in the saturation region (V-D = 10 V), which increases with decreasing channel length. We propose that this is explained by the drain-induced barrier lowering that is due to the H2O molecules. Moreover, a hydrogen bonding model under bias stress is also proposed, in contrast to the conventional H2O doping model. Recovery behavior after bias stress and ac operation were utilized to distinguish the difference between these models.
Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low Temperature Poly-Si Thin-Film Transistors
(2017-04-05)
Chen, Bo-Wei
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Chang, Ting-Chang
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Chang, Kuan-Chang
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Hung, Yu-Ju
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Huang, Shin-Pin
The surface morphology in polycrystalline silicon (poly-Si) film is an issue regardless of whether conventional excimer laser annealing (ELA) or the newer metal-induced lateral crystallization (MILC) process is used. This paper investigates the stress distribution while undergoing longterm mechanical stress and the influence of stress on electrical characteristics. Our simulated results show that the nonuniform stress in the gate insulator is more pronounced near the polysilicon/gate insulator edge and at the two sides of the polysilicon protrusion. This stress results in defects in the gate insulator and leads to a nonuniform degradation phenomenon, which affects both the performance and the reliability in thin-film transistors (TFTs). The degree of degradation is similar regardless of bending axis (channel-length axis, channel-width axis) or bending type (compression, tension), which means that the degradation is dominated by the protrusion effects. Furthermore, by utilizing long-term electrical bias stresses after undergoing long-tern bending stress, it is apparent that the carrier injection is severe in the subchannel region, which confirms that the influence of protrusions is crucial. To eliminate the influence of surface morphology in poly-Si, three kinds of laser energy density were used during crystallization to control the protrusion height. The device with the lowest protrusions demonstrates the smallest degradation after undergoing long-term bending.
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors
(2017-03-06)
Su, Wan-Ching
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Yu-Jia
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Chen, Bo-Wei
This paper investigates the degradation behavior of InGaZnO thin film transistors (TFTs) under negative bias illumination stress (NBIS). TFT devices with two different source and drain layouts were exanimated: one having a parallel format electrode and the other with UI format electrode. UI means that source/drain electrodes shapes is defined as a forked-shaped structure. The I-V curve of the parallel electrode exhibited a symmetric degradation under forward and reverse sweeping in the saturation region after 1000 s NBIS. In contrast, the I-V curve of the UI electrode structure under similar conditions was asymmetric. The UI electrode structure also shows a stretch-out phenomenon in its C-V measurement. Finally, this work utilizes the ISE-Technology Computer Aided Design (ISE-TCAD) system simulations, which simulate the electron field and IV curves, to analyze the mechanisms dominating the parallel and UI device degradation behaviors. Published by AIP Publishing.
The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)
(2017-04-10)
Su, Wan-Ching
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Chang, Ting-Chang
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Liao, Po-Yung
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Chen, Yu-Jia
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Chen, Bo-Wei