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The effect of asymmetrical electrode form after negative bias illuminated stress in amorphous IGZO thin film transistors (vol 110, 103502, 2017)

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2017-04-10

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10.1063/1.4979076

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http://dx.doi.org/10.1063/1.4979076
 https://ir.lib.nycu.edu.tw/handle/11536/145401

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期刊論文;;Articles

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