Browsing by Author "Chen, Chia-Hao"

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A gate-free monolayer WSe2 pn diode
(2018-08-07)
Chen, Jhih-Wei
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Lo, Shun-Tsung
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Ho, Sheng-Chin
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Wong, Sheng-Shong
;
Vu, Thi-Hai-Yen
Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron microspectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron-photon toolbox and pave the way to develop laterally 2D electronics and photonics.
Core-Level Shift of Graphene with Number of Layers Studied by Microphotoelectron Spectroscopy and Electrostatic Force Microscopy
(2014-10-30)
Lin, Chi-Yuan
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Shiu, Hung-Wei
;
Chang, Lo-Yueh
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Chen, Chia-Hao
;
Chang, Chen-Shiung
The dependence of C-1s core-level shift (CLS) of graphene on the number of layer (NL) is significant information to derive the coordination-resolved C1s core-level energy (E-1s) of carbon allotropes. To observe the variation of CLS of graphene with NL, binding energy and work function of graphene with various NL were examined by scanning photoelectron microscopy/spectroscopy and electrostatic force microscopy. E1s of grounded graphene decreased as NL increased. The E-1s of single-layer graphene and multilayer graphene (MLG) is 289.42 and 289.13 eV, respectively. Based on the NL-dependent E1s of graphene, the CLS of C-1s between a free carbon atom and diamond is 0.74 eV, calculated by the bond-order-length-strength correlation theory. The CLS of graphene with NL supported the existence of surface core-level shift (SCLS) on graphite. The magnitude of SCLS in MLG was +0.09 eV. The effective coordination number is 3.68 for bilayer graphene and 4.31 for the surface carbon layer in MLG.
Depth-Profiling Electronic and Structural Properties of Cu(In,Ga)(S,Se)(2) Thin-Film Solar Cell
(2016-09-14)
Chiang, Ching-Yu
;
Hsiao, Sheng-Wei
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Wu, Pin-Jiun
;
Yang, Chu-Shou
;
Chen, Chia-Hao
Utilizing a scanning photoelectron microscope (SPEM) and grazing-incidence X-ray powder diffraction (GIXRD), we studied the electronic band structure and the crystalline properties of the pentanary Cu(In,Ga)(S,Se)(2) (CIGSSe) thin-film solar cell as a function of sample depth on measuring the thickness-gradient sample. A novel approach is proposed for studying the depth-dependent information on thin films, which can provide a gradient thickness and a wide cross-section of the sample by polishing process. The results exhibit that the CIGSSe absorber layer possesses four distinct stoichiometries. The growth mechanism of this distinctive compositional: distribution formed by a two stage process is described according to the thermodynamic reaction and the manufacturing, process. On the basis of the depth-profiling results, the gradient profiles of the conduction and valence bands were constructed to elucidate the performance of the electrical properties (in this case, V-oc = 620 mV, J(sc) = 34.6 mA/cm(2), and eta = 14.04%); the valence-band maxima (VBM) measured with a SPEM in the spectroscopic mode coincide with this band-structure model, except for a lowering of the VBM observed in the surface region of the absorber layer due to the ordered defect compound (ODC). In addition, the depth-dependent texturing X-ray diffraction pattern presents the crystalline quality and the residual stress for each depth of a thin-film device. We find that the randomly oriented grains in the bottom region of the absorber layer and the different residual stress between the underlying Mo and the absorber interface, which can deteriorate the electrical performance due to peeling-off effect. An anion interstitial defect can be observed on comparing the anion concentration, of the elemental distribution with crystalline composition; a few excess sulfur atoms insert in interstitial sites at the front side of the absorber layer, whereas the interstitial selenium atoms insert at the back side.
Direct spectroscopic evidence of charge reversal at the Pb(Zr(0.2)Ti(0.8))O(3)/La(0.7)Sr(0.3)MnO(3) heterointerface
(2011-01-21)
Wu, Chung-Lin
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Lee, Pei-Wei
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Chen, Yi-Chun
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Chang, Lo-Yueh
;
Chen, Chia-Hao
At the heterointerface of a top ferroelectric Pb(Zr(0.2)Ti(0.8))O(3) (PZT) ultrathin film and a bottom La(0.7)Sr(0.3)MnO(3) (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
Direct spectroscopic evidence of charge reversal at the Pb(Zr0.2Ti0.8)O-3/La0.7Sr0.3MnO3 heterointerface
(2011-01-21)
Wu, Chung-Lin
;
Lee, Pei-Wei
;
Chen, Yi-Chun
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Chang, Lo-Yueh
;
Chen, Chia-Hao
At the heterointerface of a top ferroelectric Pb(Zr0.2Ti0.8)O-3 (PZT) ultrathin film and a bottom La0.7Sr0.3MnO3 (LSMO) electrode, we used continuous synchrotron-radiation photoelectron spectroscopy to probe in situ and demonstrated that the interfacial charges are reversible and their affected valence-band barrier height becomes modulated upon switching the polarization in the top layer. By monitoring the core-level shifting of the buried LSMO layer under continuous illumination of synchrotron radiation, we directly observed a temporal screening of polarization induced by the photon-generated carriers in the top PZT layer. This dynamic characterization of the core-level shifting of the buried layer demonstrates an effective method to probe the electric conduction and ferroelectric polarization of an ultrathin ferroelectric oxide thin film.
Effects of pillar size modulation on the magneto-structural coupling in self-assembled BiFeO3-CoFe2O4 heteroepitaxy
(2020-01-21)
Amrillah, Tahta
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Chen, Yu-Xun
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My Ngoc Duong
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Abdussalam, Wildan
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Simanjuntak, Firman Mangasa
The magneto-structural coupling of BiFeO3 (BFO)-CoFe2O4 (CFO)/LaAlO3 (LAO) heteroepitaxy with various lateral sizes of CFO pillars embedded in a BFO matrix was investigated. A structural phase transformation of the BFO matrix was observed when the pillar size of CFO was increased to exceed 200 nm. Such structural transformation led to modification of magneto-elastic coupling behavior and magnetic anisotropy in the BFO-CFO/LAO system. The flexibility of tuning the pillar size of CFO, and hence, the strain and interfacial effect on the multiferroic system have significant application implications in these functional oxide nanocomposites.
Electronic properties of free-standing TiO2 nanotube arrays fabricated by electrochemical anodization
(2015-01-01)
Chen, Chi Liang
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Dong, Chung-Li
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Chen, Chia-Hao
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Wu, Jen-Wei
;
Lu, Ying-Rui
Nanotubular TiO2 has attracted considerable attention owing to its unique functional properties, including high surface area and vectorial charge transport along the nanotube, making it a good photocatalytic material. Anodic TiO2-nanotube (TiNT) arrays on a Ti foil substrate were prepared by electrochemical anodic oxidation and SEM/HRTEM/XRD analyses have suggested that the walls of TiO2 tubes are formed from stacked [101] planes (anatase). Both HRTEM and XRD indicate an interplanar spacing of d(101) = 0.36 nm in the wall structure. Despite the large amount of work done on nanotube synthesis, a thorough investigation of the electronic and atomic structures of free-standing TiNT arrays has not yet been carried out. X-ray absorption spectroscopy (XAS), resonant inelastic X-ray scattering (RIXS) and scanning photoelectron microscopy (SPEM) are employed herein to examine the electronic and atomic structures at the top and bottom of TiNT arrays. These analyses demonstrate the presence of mixed valence states of the Ti ions (Ti3+ and Ti4+) and a structural distortion at the bottom cap region of the TiNT. Additionally, the results obtained herein suggest the formation of a defective anatase phase at the bottom cap barrier layer between the Ti foil substrate and TiNT during the growth of electrochemically anodized nanotubes.
Graphene On Au-Coated SiOx Substrate: Its Core-Level Photoelectron Microspectroscopy Study
(2012-08-01)
Chen, Jhih-Wei
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Wang, Chiang-Lun
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Shiu, Hung Wei
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Lin, Chi-Yuan
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Chang, Chen-Shiung
"The core-level electronic structures of exfoliated graphene sheets on a Au-coated SiOx substrate have been studied using synchrotron radiation photoelectron spectroscopy (SR-PES) on a micron scale. The graphene's visibility on the Au-coated SiOx substrate was first demonstrated by micro optical characterization, and then an SR-PES study was conducted. Because of the elimination of charging effect, a precise C 1s core-level characterization shows graphitic and contaminated carbon states of graphene. Different levels of Au-coating-induced p-type doping on single-and double-layer graphene sheets were also examined in the C 1s core-level shift. The Au-coated SiOx substrate can be treated as a simple but high-throughput platform for in situ studying graphene under further hybridization by PES. (C) 2012 The Japan Society of Applied Physics"
Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals
(2020-04-28)
Lu, Li-Syuan
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Chen, Guan-Hao
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Cheng, Hui-Yu
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Chuu, Chih-Piao
;
Lu, Kuan-Cheng
Palladium diselenide (PdSe2), a peculiar noble metal dichalcogenide, has emerged as a new two-dimensional material with high predicted carrier mobility and a widely tunable band gap for device applications. The inherent in-plane anisotropy endowed by the pentagonal structure further renders PdSe2 promising for novel electronic, photonic, and thermoelectric applications. However, the direct synthesis of few-layer PdSe2 is still challenging and rarely reported. Here, we demonstrate that few-layer, single-crystal PdSe2 flakes can be synthesized at a relatively low growth temperature (300 degrees C) on sapphire substrates using low-pressure chemical vapor deposition (CVD). The well-defined rectangular domain shape and precisely determined layer number of the CVD-grown PdSe2 enable us to investigate their layer-dependent and in-plane anisotropic properties. The experimentally determined layer-dependent band gap shrinkage combined with first-principle calculations suggest that the interlayer interaction is weaker in few-layer PdSe2 in comparison with that in bulk crystals. Field-effect transistors based on the CVD-grown PdSe2 also show performances comparable to those based on exfoliated samples. The low-temperature synthesis method reported here provides a feasible approach to fabricate high-quality few-layer PdSe2 for device applications.
Surface-enhanced Raman scattering of graphene with photo-assisted-synthesized gold nanoparticles
(2013-03-11)
Cheng, Cheng-En
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Lin, Chi-Yuan
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Chang, Hao-Yu
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Huang, Chen-Han
;
Lin, Hsing-Ying
This paper presents a convenient and reliable method to prepare gold nanoparticles (AuNPs) on graphene. Photo-assisted synthesis (PAS) was employed to grow AuNPs in AuCl4- electrolyte on graphene. The size of AuNPs could be as large as 130 nm. This optical method had a steady growth rate of AuNPs. The distribution of AuNPs was well controlled by focusing the laser for PAS. The minimum diameter of the distribution was approximately 1 mu m. Surface-enhanced Raman scattering of graphene due to AuNPs was observed. Electrical fields near AuNPs calculated by the finite-difference time-domain algorithm ensured that the Raman enhancement was attributed to the localized surface plasmons of AuNPs. (c) 2013 Optical Society of America
Synchrotron Radiation Soft X-ray Induced Reduction in Graphene Oxide Characterized by Time-Resolved Photoelectron Spectroscopy
(2015-06-11)
Lin, Chi-Yuan
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Cheng, Cheng-En
;
Wang, Shuai
;
Shiu, Hung Wei
;
Chang, Lo Yueh
Synchrotron radiation soft X-ray was employed to reduce graphene oxide (GO) films in ultrahigh vacuum. The dissociation of oxygen-containing functional groups, and the formation of sp(2) C-C bonds were revealed by time-resolved in situ X-ray photoelectron spectroscopy, demonstrating the X-ray reduction of GO. The number of C-O bonds of G-O exhibited an exponential decay with exposure time. The X-ray reduction rate of G-O was positively correlated with the intensity of low-energy secondary electrons excited from substrates by soft X-ray, indicating the C-O bonds were dissociated by secondary electrons.