Browsing by Author "Chen, H. M."

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P-channel SONOS transient current modeling for program and erase
(2006)
Du, Pei-Ying
;
Guo, Jyh-Chyurn
;
Lee, H. M.
;
Chen, H. M.
;
Shen, Rick
Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t(-1) behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.
Sub-ns Access Sub-mW/GHz 32 Kb SRAM with 0.45 V Cross-Point-5T Cell and Built-in Y_Line
(2019-01-01)
He, C. Y.
;
Tang, K. H.
;
Chen, T. S.
;
Chang, K. Y.
;
Lin, C. H.
A 0.45 V 28-nm 32 -Kb SRAM with multi-powersupply low-power circuits, such as a cross-point 5T with built-in Y_line, gate-boosted drivers and adaptive tracking circuits, demonstrates a sub-ns access time and sub mW/GHz power dissipation. The 5T circuits are feasible to reduce the power of a 6T 32-Kb core to about 30% with quite the same sub-ns access time. The performance evaluation also indicates the new bit cell and array architecture open the door to the sub-ns access time and sub mW/GHz in sub-0.5 V multi-Mb era.