P-channel SONOS transient current modeling for program and erase

Abstract

Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t(-1) behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.