Browsing by Author "Chen, Kuang-Chung"

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Fabrication of optical reflectors by using of elastomer with self-organized undulations
(2008-08-01)
Wang, Jui-Hao
;
Shih, Teng-Kai
;
Chen, Chia-Fu
;
Chen, Kuang-Chung
;
Chen, Chien-Chung
Back-surface diffusive reflectors have been widely applied in many optical systems to promote the efficiency used in system. In this work, we propose a novel way to fabricate a soft diffusive reflector by using of silicone (polydimethylsiloxane, PDMS). High-reflectance substrates were first fabricated by mixing nanoscaled TiO2 powders with PDMS polymers, and then microscale wave-like undulations were spontaneously developed after the substrates were dipped into H2SO4/HNO3 solutions. After optical examination, a TiO2/PDMS plate comprising microscale undulations, which can surely serve as a reflector, could reflect and diffuse light effectively. Besides, all fabrication processes can be executed in the ambient environment and at low temperature. This proposed method has a potential for mass production in the future. (c) 2008 Elsevier B.V. All rights reserved.
Low-temperature CVD growth of carbon nanotubes for field emission application
(2007-03-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Lee, Jen-Hao
;
Wu, Tai-Lin
;
Hwang, Chian-Liang
For field emission application, carbon nanotube emitters were synthesized on catalyst-mixed thick-film electrode lower than 500 degrees C by chemical vapor deposition (CVD) method. Mixtures of Ni/tetraethyl silicate (TEOS) and conducting Ag powders were applied to fabricate the electrode by screen-printing processes. These processes are simple, low cost and easy to scale up for large sized panels. The field emission properties performed uniform emission image and high brightness (no less than 500 nits). The turn-on electric field was about 3.85 V/mu m with an emission current destiny of 10 mu A/cm(2), and the achieved current density was 1 mA/cm(2) driven by 5 V/mu m. (c) 2006 Elsevier B.V. All rights reserved.
Low-temperature CVD growth of carbon nanotubes for field emission application
(2007-03-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Lee, Jen-Hao
;
Wu, Tai-Lin
;
Hwang, Chian-Liang
For field emission application, carbon nanotube emitters were synthesized on catalyst-mixed thick-film electrode lower than 500 degrees C by chemical vapor deposition (CVD) method. Mixtures of Ni/tetraethyl silicate (TEOS) and conducting Ag powders were applied to fabricate the electrode by screen-printing processes. These processes are simple, low cost and easy to scale up for large sized panels. The field emission properties performed uniform emission image and high brightness (no less than 500 nits). The turn-on electric field was about 3.85 V/mu m with an emission current destiny of 10 mu A/cm(2), and the achieved current density was 1 mA/cm(2) driven by 5 V/mu m. (c) 2006 Elsevier B.V. All rights reserved.
Selected area electrophoretic deposition of carbon nanotubes in triode structure for field emission device
(2007-07-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Whang, Wha-Tzong
;
Chen, Kuo-Feng
;
Hwang, Jun-Dar
In this work, carbon nanotubes (CNTs) were deposited in a triode structure by electrophoretic deposition (EPD). Two power supplies were used in order to provide a gate electrode and a cathode electrode with different voltages. Following the electric field distribution, CNTs were forcibly dragged toward the cathode electrode but repelled out of the gate electrode. By this designed voltage-controlling method, CNTs were deposited in the selected area without any photoresist or sacrificial layer.
Thick-film structure geometry effect on carbon nanotubes synthesized by chemical vapor deposition
(2008-06-01)
Chen, Kuang-Chung
;
Chen, Chia-Fu
;
Whang, Wha-Tzong
;
Lee, Shu-Hsing
;
Chen, Kuo-Feng
In chemical vapor deposition (CVD) technology, the mass flow transport behaviors of precursor gases play an important role particularly in thick-film normal triode structures. The depth dimension of dielectric holes in thick-film normal triode structures may range from 10 to 50 mu m. The relationship between carbon nanotube (CNT) synthesis and aspect ratio of dielectric holes is investigated in this work. In high-aspect-ratio dielectric holes (such as narrow and deep holes), precursor diffusion driven by concentration gradient must be combined with pumping assistance in order to force reactive gas to flow toward the catalyst at the bottom of dielectric holes for CNT growth.