Browsing by Author "Chen, Li-Wen"

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An Enhanced Handover Scheme adopting Mobile Relays in a LTE-A Network for High-Speed Movements
(2017-01-01)
Chen, Li-Wen
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Huang, Yu-Lun
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電控工程研究所
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Institute of Electrical and Control Engineering
In a high movement environment, handover occurs frequently in a mobile network and degrades the quality of mobile communication and service. The shorter the handover delay is, the better the communication quality can be obtained. To shorten the handover delay for a bunch of UEs moving in the same direction, mobile relays (MR), an intermediate role between a UE and an eNodeB (eNB), have been introduced to support mobile communication and service in a Long-Tern Evolution Advanced (LTE-A) network for high-speed rail systems. MR acts as an eNB for the UE, and acts as a UE for the eNB. Since a train travels along a fixed trajectory, target eNB are predicatible when handover is required. Based on such an assumption, we design an enhanced handover scheme to simultaneously synchronize the target eNB and complete the path switch among the serving eNB and target eNB. We run several simulations to show that the proposed scheme can shorten 29.63% of the handover delay.
On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect
(2013-01-01)
Chen, Chieh-Yang
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Li, Yiming
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Chen, Yu-Yu
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Chang, Han-Tung
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Hsu, Sheng-Chia
Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs
(2013-01-01)
Chen, Yu-Yu
;
Huang, Wen-Tsung
;
Hsu, Sheng-Chia
;
Chang, Han-Tung
;
Chen, Chieh-Yang
In this paper, we estimate the influence of random dopants (RDs), interface traps (ITs), and random work functions (WKs) using the experimentally calibrated 3D device simulation on DC characteristic of high-kappa / metal gate n- and p-type bulk fin-typed field-effect-transistors. We further study these intrinsic parameter fluctuations\' impact on drain induced barrier lowering (DIBL). The main findings of this work show the RDF and WKF on n-type device are larger than that of p-type one. The DIBL is dominated by the number of random dopants.