Browsing by Author "Chen, P. C."

Now showing 1 - 17 of 17

A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf Capacitor
(2010-01-01)
Cheng, C. H.
;
Huang, C. C.
;
Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO(3)/TaN and TaN/SrTiO(3)/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf Capacitor
(2010-01-01)
Cheng, C. H.
;
Huang, C. C.
;
Hsu, H. H.
;
Chen, P. C.
;
Chiang, K. C.
In this article, we investigate the frequency-dependent voltage nonlinearity effect of high-kappa Ni/SrTiO3/TaN and TaN/SrTiO3/TaN radio-frequency (rf) metal-insulator-metal (MIM) capacitors by electrical and thermal stresses. The experimental results demonstrated that the MIM-related capacitance properties, dependence of voltage and frequency, are not only affected by intrinsic dielectric properties but also shared by extrinsic effect, which possibly originated from the oxygen vacancies or electrode polarization. The high work-function Ni electrode can prevent the frequency-dependent voltage coefficient of capacitance characteristics from deterioration under the high temperature or continued voltage-stressing environments. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3491490] All rights reserved.
Advanced Metal-Gate/High-kappa CMOS with Small EOT and Better High Field Mobility
(2012)
Chin, Albert
;
Chen, W. B.
;
Chen, P. C.
;
Wu, Y. H.
;
Chi, C. C.
Continuously down-scaling the operation voltage, saving energy, and maintaining high performance are the major challenge for CMOS device. Small 0.95 similar to 1.4 nm equivalent-oxide thickness (EOT) and 1.4 similar to 2.5X better mobility than universal SiO2/Si data are achieved in metal-gate/high-kappa/Ge CMOS at 1 MV/cm effective field (E-eff). These excellent performances were achieved by using interface engineering and novel process, to overcome the poor high-kappa/Ge interface reaction, low source-drain dopant activation, and n(+)/p ohmic contact. The all-Ge CMOS with measured higher electron and hole mobility has irreplaceable merits of much simpler process, lower cost, and potentially higher yield than the InGaAs-nMOS/Ge-pMOS platform for IC manufacture.
Bipolar switching characteristics of low-power Geo resistive memory
(2011-08-01)
Cheng, C. H.
;
Chen, P. C.
;
Liu, S. L.
;
Wu, T. L.
;
Hsu, H. H.
We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO(x) dielectric. This cost-effective Ni/GeO(x)/TaN RRAM device has very small set power of 2 mu W, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 degrees C. The current flow at low-resistance state is governed by Poole-Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM. (C) 2011 Elsevier Ltd. All rights reserved.
Channel Modification Engineering by Plasma Processing in Tin-Oxide Thin Film Transistor: Experimental Results and First-Principles Calculation
(2017-01-01)
Chiu, Y. C.
;
Chen, P. C.
;
Chang, S. L.
;
Zheng, Z. W.
;
Cheng, C. H.
In this paper, we investigated the effects of oxygen plasma treatment on tin oxide (SnOx) thin film transistors (TFTs). By using oxygen plasma treatment on SnOx active channel layer, excess oxygen was incorporated to the channel layer and converted oxygen-deficient SnOx to oxygen-rich SnO2-x, which in turn causes the device operation from p-type to n-type. Tuning the different exposure time of oxygen plasma, the optimal TFT device exhibits n-type properties with an on/off current ratio of 2.6 x 10(4), a very high field-effect mobility of 89 cm(2) V-1 s(-1), and a threshold voltage of -0.95 V. Furthermore, the effects of oxygen plasma treatment on band structure, density of states and electron density difference of the SnOx channel layer were performed by the first-principles calculation using density functional theory. The results show that the oxygen plasma treatment approach has high potential for high-performance TFT applications. (C) 2017 The Electrochemical Society. All rights reserved.
Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal Method
(2010)
Yang, P. Y.
;
Wang, J. L.
;
Tsai, W. C.
;
Wang, S. J.
;
Chen, P. C.
In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10(6), and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.
Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memory
(2007)
Tang, Chun-Jung
;
Li, C. W.
;
Wang, Tahui
;
Gu, S. H.
;
Chen, P. C.
A new program disturb in a buried diffusion bit-line SONOS array is observed as a bit-line width is reduced. A multi-step Monte Carlo simulation is performed to explore the disturb mechanism. We find that the V, shift of a disturbed cell is attributed to impact ionization-generated secondary electrons in a neighboring cell when it is in programming. The effects of substrate bias, bit-line dimension and pocket implant on the program disturb are characterized and evaluated by a Monte Carlo simulation.
Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination
(2017-03-01)
Chiu, Y. C.
;
Zheng, Z. W.
;
Cheng, C. H.
;
Chen, P. C.
;
Yen, S. S.
The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the alpha-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of similar to 70 mV/dec and high device mobility of >100 cm(2)/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.
High-field mobility metal-gate/high-kappa Ge n-MOSFETs with small equivalent-oxide-thickness
(2011-01-01)
Chen, W. B.
;
Cheng, C. H.
;
Lin, C. W.
;
Chen, P. C.
;
Chin, Albert
We fabricated high performance gate-last TaN/La(2)O(3)/SiO(2) on Ge n-MOSFET. Small equivalent-oxide-thickness (EOT) of 1.9-nm and high-field mobility of 258 cm(2)/V s at 0.75 MV/cm were obtained, which were attributed to the thin SiO(2)-like barrier layer and low process temperature to prevent interfacial reaction during post-deposition annealing (PDA). (C) 2010 Elsevier Ltd. All rights reserved.
Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
;
Chin, Albert
In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors
(2010-06-01)
Cheng, C. H.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
;
Chin, Albert
In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
Highly uniform low-power resistive memory using nitrogen-doped tantalum pentoxide
(2012-07-01)
Cheng, C. H.
;
Chen, P. C.
;
Wu, Y. H.
;
Wu, M. J.
;
Yeh, F. S.
Highly uniform current distributions of high resistance state (HRS) and low resistance state (LRS), low 0.6 pJ switching energy, fast 30 ns switching speed, and good 10(6) cycling endurance are achieved in Ni/GeOx/Ta2O5-yNy/TaN resistive random access memory (RRAM) devices. Such good performance is attributed to nitrogen-related acceptor level in Ta2O5-yNy for better hopping conduction, which leads to forming-free resistive switching and low self-compliance switching currents. (C) 2012 Elsevier Ltd. All rights reserved.
Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO(2) dielectrics for metal-insulator-metal (MIM) capacitors using TiO(2)-LaAlO (TLAO) and TiO(2)-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO(2) dielectrics with the introduction of LaAlO(3) and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM Capacitors
(2010-01-01)
Cheng, C. H.
;
Deng, C. K.
;
Hsu, H. H.
;
Chen, P. C.
;
Liou, B. H.
We proposed two lanthanide-oxide mixed TiO2 dielectrics for metal-insulator-metal (MIM) capacitors using TiO2-LaAlO (TLAO) and TiO2-LaYO (TLYO) dielectrics. For the TLAO dielectric, a high capacitance density of 24 fF/mu m(2) with a low leakage current of 1.4 x 10(-7) A/cm(2) was obtained. The LaYO and TLYO dielectrics showed very low leakage densities of 4.18 and 6.89 fA/pF V at -1 V, respectively, which satisfied the International Technology Roadmap for Semiconductors' (ITRS) goal of <7 fA/pF V for precision analog capacitors. Although the capacitance-voltage nonlinearities were not yet good enough to satisfy the ITRS requirements, the MIM capacitors have shown improved electrical properties. Therefore, we suggested that the TiO2 dielectrics with the introduction of LaAlO3 and LaYO might be promising for MIM capacitors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3439668] All rights reserved.
Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layer
(2011-12-01)
Cheng, C. H.
;
Chen, P. C.
;
Wu, Y. H.
;
Yeh, F. S.
;
Chin, Albert
Using nanocrystal (nc) TiO(2) and TaON buffer layer, the Ni/GeO(x)/nc-TiO(2)/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer
(2011-12-01)
Cheng, C. H.
;
Chen, P. C.
;
Wu, Y. H.
;
Yeh, F. S.
;
Chin, Albert
Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.
The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive Memories
(2015-06-01)
Zheng, Z. W.
;
Hsu, H. H.
;
Chen, P. C.
;
Cheng, C. H.
;
電子工程學系及電子研究所
Using oxygen vacancy rich (VO-rich) TiOx dielectric with high work function Ni electrode, large resistance window of > 10x and narrow current distribution were realized in the NiNO-rich TiOx/TaN resistive random access memory (RRAM) device. It can be ascribed to the formation and rupture of conducting filaments by the percolation of VOs and Ti interstitials. Moreover, the effects of annealing treatment and top electrode on resistive switching properties were investigated. The device with VO-deficient TiOx after annealing reduces the defects and exhibits small window and low switching currents. The device with low work function Ti top electrode provides low barrier to increase reset currents and the randomly distributed filamentary paths forms near the Ti causes wide current distribution.