Long-Endurance Nanocrystal TiO(2) Resistive Memory Using a TaON Buffer Layer

Abstract

Using nanocrystal (nc) TiO(2) and TaON buffer layer, the Ni/GeO(x)/nc-TiO(2)/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.