Browsing by Author "Chen, Pin-Guang"

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Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films
(2020-06-01)
Luo, Jun-Dao
;
Yeh, Yun-Tien
;
Lai, Yu-Ying
;
Wu, Chia-Feng
;
Chung, Hao-Tung
The ferroelectric characteristics of undoped hafnium oxide (HfO2) in titanium nitride (TiN)/HfO2/TiN stacks exhibited improved remanent polarization by controlling the nitrogen gas flow during TiN deposition in this work. Electrical measurements revealed that samples with a higher N-2/(Ar + N-2) ratio obtained a higher remanent polarization of approximately 10 mu C/cm(2) at 2.5 V but exhibited a larger leakage current and less reliability. Among all the samples, the sample with a N-2/(Ar + N-2) ratio of 33% exhibited a relatively high remanent polarization of 12 mu C/cm(2) and excellent endurance over 10(8) cycles. Through X-ray photoelectron spectroscopy (XPS) analysis, it was observed that increasing the N-2 gas flow during TiN electrode deposition contributed to excessive N-diffusion, leading to the creation of more oxygen vacancies and subsequently to device failure. Therefore, controlling the appropriate N-2 gas flow during TiN deposition is crucial to enhance the ferroelectric characteristics of undoped HfO2. The results of this study may be applicable to future work on nonvolatile memory applications.
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors
(2014-10-20)
Lee, Ya-Ju
;
Yang, Zu-Po
;
Chen, Pin-Guang
;
Hsieh, Yung-An
;
Yao, Yung-Chi
In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication. (C) 2014 Optical Society of America
Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply
(2018-01-22)
Lee, Ya-Ju
;
Yang, Zu-Po
;
Chen, Pin-Guang
;
Hsieh, Yung-An
;
Yao, Yung-Chi
We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment" [Opt. Express 22, A1589 (2014)]. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Negative-Capacitance FinFET Inverter, Ring Oscillator, SRAM Cell, and Ft
(2018-01-01)
Li, Kai-Shin
;
Wei, Yun-Jie
;
Chen, Yi-Ju
;
Chiu, Wen-Cheng
;
Chen, Hsiu-Chih
In this work, we use thermal-ALD to prepare ferroelectric HfZrO2 (HZO) thin film with thickness from 3 to 7 nm for the NC-FinFET's gate stack. The subthreshold swing (SS) was as low as 5 mV/dec (SSmin) over 4 orders of I-D. Lower thermal budget process, CO2 far-infrared laser activation and 400 degrees C Ni silicide are employed in the 2-level metal backend integration for maintaining the orthorhombic phase in HZO thin film and minimizing the hysteresis in IV. NC-FinFET inverter has 77% higher voltage gain compared to FinFET-inverter employing HfO2 gate dielectric. NC-FinFET ring oscillator exhibit small speed and power advantages over FinFET oscillator. For the first time, NC-FET cut-off frequency (F-t) frequency is measured, 23.1 GHz or 23% higher than the control FET Ft. NC-FinFET SRAM was observed to exhibit large noise margin.