Browsing by Author "Chen, Samuel"

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Contaminations of MgO Thin Films by Phosphors for the Surface and Vertical Discharge Type AC-PDP
(2006)
Jen, Ko-Ruey
;
Kim, Sung-O
;
Chen, Kuang-Lang
;
Chen, Samuel
;
Lee, Chien-Pang
The panels were fabricated to characterize the contamination of Magnesium Oxide (MgO) thin films by phosphors and ion bombardments in AC-PDPs. Forty-six inch WVGA panels of the surface and vertical discharge type were manufactured. The experiment was designed to investigate the relationship between the MgO thin films and phosphor contamination caused by ion bombardments in a plasma environment to produce a time lest. The contamination of MgO thin films by phosphors was investigated by way of X-ray photoelectron spectroscopy (XPS).
The Effect of Oxygen Flow Rates on the Electrical Resistivity of MgO Thin Films in AC-PDPs
(2006)
Chou, Hong-Chieh
;
Kim, Sung-O
;
Chen, Kuang-Lang
;
Chen, Samuel
;
Lee, Chien-Pang
Magnesium oxide thin films were deposited with different thickness and oxygen flow rates for investigation the effects of the electrical resistivity of MgO thin films in AC-PDPs. The surface roughness was characterized by AFM. It reveals that higher oxygen flow rate generates higher electrical resistivity of MgO thin films.
The relationship between density of MgO thin films and panel properties in AC-PDP
(2005)
Lee, Wei-Cheng
;
Kim, Sung-O
;
Chen, Kuang-Lang
;
Chen, Samuel
;
Lee, Chien-Pang
The MgO thin films for AC-PDPs are deposited by c-beam evaporation with varied oxygen flow rate and e-beam current. The panel properties such as luminance, response time, dynamic margin, color temperature and CIE coordinate are characterized as a function of time with the aging environment. The result reveals that a plasma display panel with MgO thin film of lower 02 flow rate would provide better panel properties due to higher density of MgO thin film and higher cystallinity companied with higher surface roughness.