Browsing by Author "Chen, Szu-Fen"

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Critical voltage reduction by alignment layer modification in Pi-cells
(2007)
Wu, Wei-Ching
;
Chen, Yi-Fan
;
Chen, Szu-Fen
;
Chen, Huang-Ming Philip
;
光電工程學系
A new approach which can effectively lower the critical voltage (Vcr) of pi cell has been realized in this study. New structure of pi r cell can increase the control range of driving voltage, which makes the gray scale manipulation near Vcr more stable without loosing the fast response property.
DOPANT EFFECTS OF PHOTOREACTIVE ZnO NANOPARTICLES ON FAST RESPONSE LC MATERIALS IN OPTICAL COMPENSATED BEND (OCB) MODE LIQUID CRYSTAL DISPLAYS
(2010-11-01)
Lin, Hong-Cheu
;
Jiang, Meng-Dan
;
Wang, Ling-Yung
;
Chen, Wei-Hong
;
Chen, Szu-Fen
Photoreactive ZnO nanoparticles containing surface-modified acrylate groups were synthesized and applied to improve the threshold voltage in optical compensated bend (OCB) mode liquid crystal display (LCD) cells. The dopant effects of ZnO nanoparticles with or without commercial reactive monomer additives (1 wt% doping ratio) on the values of threshold voltage (V-th) and response time in OCB cells were explored by applying different voltages to photo-reactive ZnO nanoparticles during UV curing processes in OCB cells to compare the influences of doped ZnO nanoparticles. As a result, we successfully eliminated or reduced the splay state of OCB mode and thus reduced threshold voltage. However, lower transmissions and higher values of the response time were observed in OCB cells doped with photoreactive ZnO nanoparticles, and the decreasing of V-th, is independent of various doping materials. Moreover, lower transmission and high response time could be improved through sequential voltage-applied procedures, i.e., bend black mode (10 V) -> bend white mode (2.5 V), under the immobile minimum threshold voltage at the bent state during UV curing processes to achieve lower pre-transition and fast response time properties by only doping photoreactive ZnO nanoparticles.
DOPANT EFFECTS OF PHOTOREACTIVE ZnO NANOPARTICLES ON FAST RESPONSE LC MATERIALS IN OPTICAL COMPENSATED BEND (OCB) MODE LIQUID CRYSTAL DISPLAYS
(2010-11-01)
Lin, Hong-Cheu
;
Jiang, Meng-Dan
;
Wang, Ling-Yung
;
Chen, Wei-Hong
;
Chen, Szu-Fen
Photoreactive ZnO nanoparticles containing surface-modified acrylate groups were synthesized and applied to improve the threshold voltage in optical compensated bend (OCB) mode liquid crystal display (LCD) cells. The dopant effects of ZnO nanoparticles with or without commercial reactive monomer additives (1 wt% doping ratio) on the values of threshold voltage (V(th)) and response time in OCB cells were explored by applying different voltages to photo-reactive ZnO nanoparticles during UV curing processes in OCB cells to compare the influences of doped ZnO nanoparticles. As a result, we successfully eliminated or reduced the splay state of OCB mode and thus reduced threshold voltage. However, lower transmissions and higher values of the response time were observed in OCB cells doped with photoreactive ZnO nanoparticles, and the decreasing of V(th), is independent of various doping materials. Moreover, lower transmission and high response time could be improved through sequential voltage-applied procedures, i.e., bend black mode (10 V) -> bend white mode (2.5 V), under the immobile minimum threshold voltage at the bent state during UV curing processes to achieve lower pre-transition and fast response time properties by only doping photoreactive ZnO nanoparticles.
High-performance nanowire TFTs with metal-induced lateral crystallized poly-Si channels
(2008-05-01)
Chang, Chia-Wen
;
Chen, Szu-Fen
;
Chang, Che-Lun
;
Deng, Chih-Kang
;
Huang, Jiun-Jia
High-performance poly-Si thin-film transistors (TFTs) with 50-nm nanowire (NW) channels fabricated by integrating a simple spacer formation scheme and metal-induced-lateral-crystallization (MILC) technique are proposed. By using the sidewall spacer formation scheme, the NW channels with nanometer-scale feature sizes can be easily fabricated, exhibiting superior channel controllability through the triple-gate structure. In employing the MILC technique, the grain crystallinity of NW channels is significantly superior to that formed by the solid-phase-crystallization (SPC) technique. Therefore, the MILC NW TFT exhibits greatly improved electrical performances, including lower threshold voltage, steeper subthreshold swing, and higher field-effect mobility, as compared to those of the SPC NW TFT. Moreover, the superior threshold-voltage rolloff characteristics of MILC NW TFT are also demonstrated.
IER Film and Inkjet Printing Method for Full-Color Transflective Cholesteric LCD
(2005-12-01)
Chen, Szu-Fen
;
Huang, Chao-Heng
;
Lu, Jhih-Ping
;
Chan, Meng-Xi
;
Shieh, Han-Ping D.
A transflective cholesteric liquid crystal display (ChLCD) is demonstrated by using the image-enhanced reflector (IER) film on the top of the transmissive region to provide the similar paths for both transmissive and reflective light, thus, to display same image color in any ambience, improving the image quality. For full color display, the inkjet printing was applied and the patterned Ch-LC droplet was successfully deposited on the substrate. Thus, full-color Ch-LCD can be fabricated by IJP.
Nanostructure structure effect on transition in pi-cells
(2007)
Lee, Chia-Tien
;
Chen, Szu-Fen
;
Chen, Huang-Fling Philip
;
顯示科技研究所
;
Institute of Display
It is well known that the operating state (bend state) of a pi-cell must be nucleated then uniformly spread the bend orientation in splay state before operation. In this study, the random distribution of silicon oxide nano-particles was investigated for decreasing the time of splay-to-bend transition in pi-cells. Under the optimum conditions, the 50% reduction of splay-to-bend transition time was found in nanostructure structure treated surfaces.
Spacer technique to fabricate pSi TFTs with 50nm nanowire channels
(2008)
Chang, Chia-Wen
;
Chen, Szu-Fen
;
Wu, Shih-Chieh
;
Lin, Guan-Liang
;
Lei, Tan-Fu
In this work, polycrystalline silicon thin-film transistors (poly-Si TFTs) with 50-nm nanowire (NW) channels fabricated without advanced photolithograph v I v using a sidewall spacer formation technique are proposed for the first time. Because the poly gate electrode is perpendicularly across poly-Si NW channels to form a tri-gate-like structure, the proposed poly-Si NW TFT owns an outstanding gate controllability. In summary, a simple and low-cost scheme is proposed to fabricate high-performance poly-Si NW TFT suitable for future display manufacturing and practical applications.